Electrical spin injection from Fe into ZnSe(001)

被引：4
|
作者：
Hanbicki, A. T. [1 ]
Kioseoglou, G. [1 ,2 ]
Holub, M. A. [1 ]
van't Erve, O. M. J. [1 ]
Jonker, B. T. [1 ]
机构：
[1] USN, Res Lab, Washington, DC 20375 USA
[2] Univ Crete, Dept Mat Sci & Technol, Iraklion 71003, Crete, Greece
来源：
APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 08期
关键词：
conduction bands; electroluminescence; ferromagnetic materials; II-VI semiconductors; iron; Schottky barriers; spin polarised transport; zinc compounds; METAL;
D O I：
10.1063/1.3089837
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have electrically injected spin-polarized current from ferromagnetic Fe(001) contacts into n-type ZnSe(001) using reverse-biased Schottky tunnel barriers which form at the Fe/ZnSe interface. Electrons transport through 3000 A of n-ZnSe and radiatively recombine in GaAs, where the circular polarization of the electroluminescence provides a quantitative measure of spin polarization. We measure electron spin polarizations over 50% in the GaAs up to 100 K. Spin injection efficiencies achieved in Fe/ZnSe are comparable to those reported for Fe/AlGaAs or Fe/GaAs Schottky tunnel structures, consistent with the common band symmetries of the Fe majority band and the conduction band of the respective semiconductor.
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页数：3
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