Thermal stability study of pore sealing using parylene N

被引：6

作者：

Ou, Ya ^{[1
]}

Wang, Pei-I ^{[1
]}

Vanamurthy, Lakshmanan H. ^{[2
]}

Bakhru, Hassaram ^{[2
]}

Lu, T. -M. ^{[1
]}

Spencer, Greg ^{[3
]}

机构：

[1] Rensselaer Polytech Inst, Ctr Integrated Elect, Troy, NY 12180 USA

[2] SUNY Albany, Coll Nanoscale Sci & Engn, Albany, NY 12203 USA

[3] Freescale Semicond Inc, Austin, TX 78721 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2008年 / 155卷 / 10期

关键词：

D O I：

10.1149/1.2967719

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The thermal stability of chemical vapor deposited (CVD) Parylene N used as a pore sealant has been evaluated. Parylene N pore sealing is shown to have a thermal stability up to 400 degrees C in an Ar-3% H-2 forming gas ambient. A 1 nm thin film of Parylene N remains effective at blocking Co precursor penetration into porous methyl silsesquioxane (MSQ) during the CVD of Co, even after being annealed at temperatures up to 400 degrees C. The leakage current improvement of pore sealed MSQ with an Al electrode is also maintained after a 400 degrees C anneal. In addition, the thermal stability of thin Parylene N films themselves has been verified up to 400 degrees C.

引用

页码：H819 / H822

页数：4

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