Modeling of dislocation loop growth and transient enhanced diffusion in silicon for amorphizing implants

被引：0
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作者：
Gencer, AH
Dunham, ST
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来源：
MATERIALS MODIFICATION AND SYNTHESIS BY ION BEAM PROCESSING | 1997年 / 438卷
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TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
It has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). We have developed a comprehensive model which, in combination with a model and parameters for {311} defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.
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页码：27 / 32
页数：6
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