Non-equilibrium thermodynamic analysis on the behaviour of point defects in growing silicon crystals: effects of stress

被引：20

作者：

Tanahashi, K ^{[1
]}

Inoue, N ^{[1
]}

机构：

[1] Univ Osaka Prefecture, RIAST, Osaka 5998570, Japan

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 1999年 / 10卷 / 5-6期

关键词：

D O I：

10.1023/A:1008945406768

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The behaviour of point defects in strained growing Czochralski (CZ) silicon is theoretically examined. Effects of stress on the equilibrium concentration and diffusion are quantitatively evaluated. Non-equilibrium thermodynamic analyses of the effect of non-uniform stress on the diffusion of vacancies, self-interstitials and recombination between them are performed. The contribution of diffusion in a non-uniform stress is compared to those of chemical and thermo-diffusion.

引用

页码：359 / 363

页数：5

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