Recombination mechanism of anti-Stokes photoluminescence in partially ordered GaInP-GaAs heterostructure

In this article, we focus on recombination mechanism of anti-Stokes photoluminescence (ASPL) at partially ordered GaInP2-GaAs interface. We find that the spectral features, i.e., energy position, lineshape, linewidth, and thermal activation energy, of the ASPL are totally different from that of the normal excitonic PL. Our results unambiguously demonstrate that the ASPL has different recombination channels from the normal PL. Our results also confirm that how to prevent the up-converted carriers captured by the interface localized states from thermally going back to the low band gap semiconductor is essential for the ASPL.