A Mobility Extraction Method for 3D Multichannel Devices

被引：2
|
作者：
Dupre, C. [1 ,2 ]
Ernst, T. [1 ]
Bernard, E. [1 ,3 ]
Guillaumot, B. [1 ,3 ]
Vulliet, N. [1 ,3 ]
Coronel, P. [3 ]
Skotnicki, T. [3 ]
Cristoloveanu, S. [2 ]
Ghibaudo, G. [2 ]
Deleonibus, S. [1 ]
机构：
[1] CEA LETI, Minatec, 17 Rue Martyrs, F-38054 Grenoble, France
[2] IMEP, INPG MINATEC, F-38016 Grenoble 1, France
[3] ST Microelect, F-38926 Crolles, France
来源：
ESSDERC 2008: PROCEEDINGS OF THE 38TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | 2008年
关键词：
D O I：
10.1109/ESSDERC.2008.4681740
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel parameter extraction method is proposed to dissociate the current contributions of each channel of highly performing Multi-Channel CMOS Low Standby Power architecture. It is shown that the very high I-ON/I-OFF ratio (NMOS: 2.27mA/mu m for 16pA/mu m PMOS 1.32mA/mu m for 16pA/mu m) obtained experimentally benefits from good short-channel mobility values of each type of channel despite a limited degradation of the GAA mobility value.
引用
收藏
页码：230 / +
页数：2
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