Annealing-induced changes in electrical, optical, and magnetic properties of phosphorus doped bulk Zn1-XMnXTe

We report on successful growth of heavily p-type doped bulk Zn1-xMnxTe crystals. Free hole density as high as 10(19) cm(-3) has been achieved by use of Zn3P2 as a source of phosphorus acceptors and by post-growth high pressure annealing. The latter proved to be of a vital importance, removing a strong compensation present in as-grown materials. As a result, the annealed crystals exhibit a very bright green photoluminescence (lambda approximate to 520 nm) at temperatures as high as 160 K. The annealed samples with hole concentration p > 2 x 10(18) cm(-3) show a positive Curie-Weiss temperature and open hysteresis curves, characteristic of a system with ferromagnetic correlations.