Electroluminescence using grain boundary in Zn1-xMnxTe doped with phosphorus

We measured current-voltage and capacitance-voltage characteristics of the grain boundary within the bicrystals of Zn1-xMnxTe (0 <= x <= 0.03) doped with phosphorus. We found that there is a symmetric electric barrier of 0.50 +/- 0.05 eV at the grain boundary, and under a bias voltage of at least 4V the grain boundary region emits intense red and green radiations originated from the intra-Mn2+ and conduction band to acceptor level transitions, respectively. The magnetic field dependence of the intra-Mn2+ emission intensity shows a hysteresis loop, indicating an optical bistability. (C) 2004 Elsevier B. V. All rights reserved.