SiGe BiCMOS Heterogeneous Integration using Wafer Bonding Technologies

被引：0
|
作者：
Wietstruck, M. [1 ]
Kaynak, M. [1 ,2 ]
Mai, A. [1 ]
机构：
[1] IHP, Technol Pk 25, D-15236 Frankfurt, Oder, Germany
[2] Sabanci Univ, TR-34959 Orta Mahalle, Tuzla, Turkey
来源：
SEMICONDUCTOR PROCESS INTEGRATION 10 | 2017年 / 80卷 / 04期
关键词：
D O I：
10.1149/08004.0135ecst
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
In this paper the potential of temporary and permanent wafer bonding techniques for heterogeneous integration of a high performance SiGe BiCMOS technology with additional More than Moore devices and technology modules is demonstrated. Temporary and permanent wafer bonding process techniques are introduced and the combination of wafer bonding with an available BiCMOS environment is explained. Two different application examples namely BiCMOS embedded Through-Silicon Vias (TSV) and BiCMOS embedded microfluidics are presented to show the potential of wafer bonding for BiCMOS heterogeneous integration. By the use of temporary and permanent wafer bonding new applications in the area of heterogeneous integration becomes feasible making SiGe BiCMOS technologies more attractive for future smart system applications.
引用
收藏
页码：135 / 146
页数：12
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