Diagnostics of hydrogen plasma with in situ optical emission and silicon probes

被引:5
|
作者
Lee, S
Chung, YJ
机构
[1] Chung Yuan Christian Univ, Dept Chem, Chungli 32023, Taoyuan, Taiwan
[2] Chung Yuan Christian Univ, Ctr Nanotechnol, Chungli 32023, Taoyuan, Taiwan
关键词
D O I
10.1063/1.2132517
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this work, an approach has been adopted to explore plasma properties by combining an in situ optical emission technique with a contact angle measurement. Hydrogen plasma was generated with a radio-frequency power source. The plasma parameters such as number densities and temperatures were derived from the optical emission spectroscopic data. Small silicon chips were placed at various positions inside a discharge tube as probes for the plasma conditions. The hydrogen-plasma-treated silicon chip surfaces were characterized with the contact angle measurement method. The change of wettability on the silicon surface was observed with various plasma treatment times. The spectroscopic information about the plasma is correlated with the results of the surface characterization. It is found that the rate of the increasing hydrophilicity is sensitive to the amount of helium added and the location in the discharge tube. A simple model describing the relation between the surface coverage area of water droplet and the variation of contact angle has been established. We have proposed plasma excitation and reaction mechanisms for the observed correlation between plasma temperatures and the wettability of the silicon surface. It shows that small silicon chips can serve as "litmus tests" for the plasma conditions without introducing too much perturbation. (c) 2005 American Institute of Physics.
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页数:8
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