First results on Ka band MMIC power amplifiers based on InAlGaN/GaN HEMT technology

被引：0

作者：

Potier, C. ^{[1
]}

Piotrowicz, S. ^{[1
]}

Patard, O. ^{[1
]}

Gamarra, P. ^{[1
]}

Altuntas, P. ^{[1
]}

Chartier, E. ^{[1
]}

Dua, C. ^{[1
]}

Jacquet, J. C. ^{[1
]}

Lacam, C. ^{[1
]}

Michel, N. ^{[1
]}

Oualli, M. ^{[1
]}

Delage, S. L. ^{[1
]}

Chang, C. ^{[2
]}

Gruenenpuett, J. ^{[3
]}

机构：

[1] III V Lab, 1 Ave Augustin Fresnel, F-91767 Palaiseau, France

[2] UMS SAS, 10 Ave Quebec, F-91140 Villebon Sur Yvette, France

[3] UMS Gmbh, Wilhelm Runge Str 11, D-89081 Ulm, Germany

来源：

INTERNATIONAL WORKSHOP ON INTEGRATED NONLINEAR MICROWAVE AND MILLIMETRE-WAVE CIRCUITS (INMMIC) | 2018年

关键词：

MMIC; HEMT; GaN; Ka Band; InAlGaN;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the simulated results and first small-signal on-wafer measurements of two MMIC power amplifiers (PA), based on InAlGaN/GaN HEMT technology, for Ka band applications. The two three-stages MMIC1 & MMIC2 are operating within a bandwidth of [27.5-31]GHz and [37-39.5]GHz, respectively and demonstrate over these bandwidths a saturated output power of 40dBm and 38dBm, respectively. Each stage use 8x50 mu m gate width HEMTs fabricated with a 0.15 mu m gate length on 70 mu m thick SiC substrate.

引用

页数：3

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