Intermixing Properties of InP-Based MQW's

被引：0
|
作者：
May-Arrioja, D. A. [1 ]
Bickel, N. [2 ]
Torres-Cisneros, M. [3 ]
Sanchez-Mondragon, J. J. [1 ]
LiKamWa, P. [2 ]
机构：
[1] INAOE, Dept Opt, Photon & Opt Phys Lab, Apdo Postal 51 & 216, Puebla 72000, Mexico
[2] Univ Cent Florida, CREOL, Coll Opt Photon, FPCE, Orlando, FL 32816 USA
[3] Univ Guanajuato, Nanobiophoton Grp, Salamanca 36730, Mexico
来源：
2008 DIGEST OF THE LEOS SUMMER TOPICAL MEETINGS | 2008年
关键词：
D O I：
10.1109/LEOSST.2008.4590479
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The intermixing characteristics of three widely used combinations of InP based quantum wells (QW) are investigated using the impurity-free vacancy disordering (IFVD) technique. We demonstrate that bandgap tuning is highly dependent on the concentration gradient of the as-grown wells and barriers, as well as the thickness of the well, with thinner wells more susceptible to interdiffusion at the interface between the barrier and well. According to our results, the InGaAsP/InGaAsP and InGaAs/InP are well suited for applications requiring a wide range of bandgap values within the same wafer. In the case of the InGaAs/InGaAsP system, its use is limited due to the significant broadening of the photoluminescence spectrum that was observed. The effect of the top InGaAs layer over the InP cladding is also investigated, and leads to a simple way to obtain three different bandgaps in a single intermixing step.
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页码：41 / +
页数：2
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