Printed, sub-2V ZnO Electrolyte Gated Transistors and Inverters on Plastic

被引:133
|
作者
Hong, Kihyon [1 ]
Kim, Se Hyun [1 ]
Lee, Keun Hyung [1 ]
Frisbie, C. Daniel [1 ]
机构
[1] Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA
基金
美国国家科学基金会;
关键词
printed ZnO transistors; electrolyte gated transistors (EGTs); thin-film transistors; flexible substrates; ion-gel gate insulators; THIN-FILM TRANSISTORS; LOW-TEMPERATURE FABRICATION; DOPED ZNO; ZINC-OXIDE; DIELECTRICS; CAPACITANCE; CIRCUITS; DEVICE; INKS;
D O I
10.1002/adma.201300211
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Printed, flexible sub-2 V ZnO electrolyte gated transistors (EGTs) are demonstrated. ZnO EGTs with high-capacitance ion-gel gate insulators are printed on a kapton substrate and the devices exhibit high electron mobility (1.61 cm-2 V-1 s-1), low operation voltage (<2 V), and good electrical/mechanical stabilities. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:3413 / 3418
页数:6
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