Printed, sub-2V ZnO Electrolyte Gated Transistors and Inverters on Plastic

被引：133

作者：

Hong, Kihyon ^{[1
]}

Kim, Se Hyun ^{[1
]}

Lee, Keun Hyung ^{[1
]}

Frisbie, C. Daniel ^{[1
]}

机构：

[1] Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA

来源：

ADVANCED MATERIALS | 2013年 / 25卷 / 25期

基金：

美国国家科学基金会;

关键词：

printed ZnO transistors; electrolyte gated transistors (EGTs); thin-film transistors; flexible substrates; ion-gel gate insulators; THIN-FILM TRANSISTORS; LOW-TEMPERATURE FABRICATION; DOPED ZNO; ZINC-OXIDE; DIELECTRICS; CAPACITANCE; CIRCUITS; DEVICE; INKS;

D O I：

10.1002/adma.201300211

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Printed, flexible sub-2 V ZnO electrolyte gated transistors (EGTs) are demonstrated. ZnO EGTs with high-capacitance ion-gel gate insulators are printed on a kapton substrate and the devices exhibit high electron mobility (1.61 cm-2 V-1 s-1), low operation voltage (<2 V), and good electrical/mechanical stabilities. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：3413 / 3418

页数：6

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