New low-voltage circuits for XOR and XNOR

被引：0
|
作者：
Lee, H
Sobelman, GE
机构：
来源：
IEEE SOUTHEASTCON '97 - ENGINEERING THE NEW CENTURY, PROCEEDINGS | 1996年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
New methods are proposed to implement the exclusive-OR and exclusive-NOR functions at the transistor level under low supply voltage. Since the dynamic power dissipation in CMOS is proportional to V-dd(2), low-voltage operation of the circuit is an important issue. The main design objectives for these new circuits are low power dissipation and full-voltage swing at a low supply voltage (V-dd=2 V). The proposed designs are compared with previously known circuits and are shown to provide superior performance. Several XOR circuits have been fully simulated using HSPICE with a 0.4 mu m CMOS technology at 2 V supply voltage.
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收藏
页码：225 / 229
页数：5
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