InAs/GaAs single-electron quantum dot qubit

被引:144
|
作者
Li, SS [1 ]
Xia, JB [1 ]
Liu, JL [1 ]
Yang, FH [1 ]
Niu, ZC [1 ]
Feng, SL [1 ]
Zheng, HZ [1 ]
机构
[1] Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
关键词
D O I
10.1063/1.1416855
中图分类号
O59 [应用物理学];
学科分类号
摘要
The time evolution of the quantum mechanical state of an electron is calculated in the framework of the effective-mass envelope function theory for an InAs/GaAs quantum dot. The results indicate that the superposition state electron density oscillates in the quantum dot, with a period on the order of femtoseconds. The interaction energy E-ij between two electrons located in different quantum dots is calculated for one electron in the ith pure quantum state and another in the jth pure quantum state. We find that E-11]E-12]E-22, and E-ij decreases as the distance between the two quantum dots increases. We present a parameter-phase diagram which defines the parameter region for the use of an InAs/GaAs quantum dot as a two-level quantum system in quantum computation. A static electric field is found to efficiently prolong the decoherence time. Our results should be useful for designing the solid-state implementation of quantum computing. (C) 2001 American Institute of Physics.
引用
收藏
页码:6151 / 6155
页数:5
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