Angular dependence of shot noise in the presence of Rashba spin-orbit coupling in semiconductor spintronics junctions

被引:6
|
作者
Mirzanian, S. M. [1 ]
Shokri, A. A. [2 ,3 ]
机构
[1] Islamic Azad Univ, Sci & Res Branch, Plasma Phys Res Ctr, Tehran, Iran
[2] Payame Noor Univ, Dept Phys, Tehran 193953697, Iran
[3] Inst Studies Theoret Phys & Math IPM, Sch Nanosci, Computat Phys Sci Res Lab, Tehran, Iran
关键词
Shot-noise; Fano factor; Diluted magnetic semiconductors; Rashba spin-orbit coupling; Spin-dependent transport; Tunneling; MAGNETORESISTANCE;
D O I
10.1016/j.physe.2013.06.001
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We investigate spin-dependent current and shot noise, taking into account the Rashba spin-orbit coupling (RSOC) effect in double diluted magnetic semiconductor (DMS) barrier resonant tunneling diodes. The calculation is based on an effective mass approach. The magnetization of DMS is calculated by the mean-field approximation in low magnetic field. The spin-splitting of DMS depends on the sp-d exchange interaction. We also examine the dependence of transport properties of CdTe/CdMnTe heterostructures on applied voltage and relative angle between the magnetization of two DMS layers. It is found that the RSOC has great different influence on the transport properties of tunneling electrons with spin-up and spin-down, which have different contributions to the current and the shot noise. Also, we can see that the RSOC enhances the spin polarization of the system, which makes the nanostructure a good candidate for new spin filter devices. Thus, these numerical results may shed light on the next applications of quantum multilayer systems and make them a good choice for future spintronics devices. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:59 / 64
页数:6
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