Gamma radiation resistance of spin Seebeck devices

被引：3

作者：

Yagmur, A. ^{[1
]}

Uchida, K. ^{[1
,2
,3
]}

Ihara, K. ^{[4
,5
]}

Ioka, I. ^{[6
]}

Kikkawa, T. ^{[1
,7
]}

Ono, M. ^{[8
]}

Endo, J. ^{[8
]}

Kashiwagi, K. ^{[8
]}

Nakashima, T. ^{[8
]}

Kirihara, A. ^{[4
,5
]}

Ishida, M. ^{[4
,5
]}

Saitoh, E. ^{[1
,5
,7
,9
,10
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[2] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan

[3] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, Japan

[4] NEC Corp Ltd, IoT Devices Res Labs, Tsukuba, Ibaraki 3058501, Japan

[5] Japan Sci & Technol Agcy, ERATO, Spin Quantum Rectificat Project, Sendai, Miyagi 9808577, Japan

[6] Japan Atom Energy Agcy, Nucl Sci & Engn Ctr, Ibaraki 3191195, Japan

[7] Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan

[8] Asahi Glass Co Ltd, Res Ctr, Yokohama, Kanagawa 2218755, Japan

[9] Tohoku Univ, Ctr Spintron Res Network, Sendai, Miyagi 9808577, Japan

[10] Japan Atom Energy Agcy, Adv Sci Res Ctr, Tokai, Ibaraki 3191195, Japan

来源：

APPLIED PHYSICS LETTERS | 2016年 / 109卷 / 24期

关键词：

CARBON NANOTUBES; FILMS; CONVERSION;

D O I：

10.1063/1.4971976

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thermoelectric devices based on the spin Seebeck effect (SSE) were irradiated with gamma (gamma) rays with the total dose of around 3 x 10(5) Gy in order to investigate the c-radiation resistance of the devices. To demonstrate this, Pt/Ni0.2Zn0.3Fe2.5O4/Glass and Pt/Bi0.1Y2.9Fe5O12/Gd3Ga5O12 SSE devices were used. We confirmed that the thermoelectric, magnetic, and structural properties of the SSE devices are not affected by the c-ray irradiation. This result demonstrates that SSE devices are applicable to thermoelectric generation even in high radiation environments. Published by AIP Publishing.

引用

页数：4

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