Effect of dopant on the accuracy of oxygen measurement in silicon by Gas Fusion Analysis

被引:0
|
作者
Chiou, HD [1 ]
Pajela, RT [1 ]
机构
[1] Motorola Inc, Semicond Components Grp, Phoenix, AZ 85008 USA
关键词
D O I
暂无
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The effect of dopant species on the accuracy of measuring oxygen content in heavily doped silicon slugs by Gas Fusion Analysis (GFA) was investigated. The correlation between the measurements of GFA, Fourier Transform Infrared Spectroscopy (FTIR) and Secondary Ion Mass Spectroscopy (SIMS) was obtained from lightly doped slugs. The GFA results of heavily doped slugs were measured against SIMS. The effect was different from different dopant species. Heavily boron-doped slugs showed the least effect with respective to lightly doped slugs. There was a slight reduction in GFA measured oxygen content, using SIMS as a reference, when boron and oxygen concentrations were high. All the n(+) slugs showed a greater effect which had lower GFA readings than the lightly doped samples when the SIMS value was higher than 17 ppma. The lower GFA oxygen for the heavily doped slugs in regards to SIMS data were explained by the easiness of oxygen to form oxides relative to the formation of carbon monoxide.
引用
收藏
页码:109 / 116
页数:8
相关论文
共 50 条
  • [41] TEMPERATURE SENSORS ON SILICON IMPROVE MEASUREMENT ACCURACY
    LEIBSON, SH
    EDN, 1985, 30 (28) : 124 - 130
  • [42] Effect of flow-rate measurement accuracy on unaccounted for gas in transmission networks
    Ficco, G.
    Canale, L.
    Cortellessa, G.
    Zuena, F.
    'Isola, M. Dell
    FLOW MEASUREMENT AND INSTRUMENTATION, 2023, 90
  • [43] Analysis of the thermal expansion effect on measurement accuracy of Rogowski coils
    Zhang, Hongling
    Wang, Haiming
    Zheng, Shengxuan
    Diangong Jishu Xuebao/Transactions of China Electrotechnical Society, 2007, 22 (05): : 18 - 23
  • [44] ANALYSIS OF TECHNOLOGICAL ACCURACY OF SILICON SURFACE THERMAL-OXIDATION IN A DRY AND WET OXYGEN
    SINEKOP, YS
    TSURIN, OF
    BONAT, EE
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII RADIOFIZIKA, 1987, 30 (09): : 42 - 45
  • [45] Automatic sample molding for measurements of oxygen and nitrogen in silicon nitrides with an inert-gas fusion technique
    Watanabe, M
    Narukawa, A
    BUNSEKI KAGAKU, 2000, 49 (10) : 771 - 774
  • [46] Measurement of the dopant concentration in a semiconductor using the Seebeck effect
    Po, J. M.
    Brito, M. C.
    Maia Alves, J.
    Silva, J. A.
    Serra, J. M.
    Vallera, A. M.
    MEASUREMENT SCIENCE AND TECHNOLOGY, 2013, 24 (05)
  • [47] Measurement accuracy analysis of photocarrier radiometric determination of electronic transport parameters of silicon wafers
    Li, BC
    Shaughnessy, D
    Mandelis, A
    JOURNAL OF APPLIED PHYSICS, 2005, 97 (02)
  • [48] The effect of oxygen partial pressure on marangoni-flow-induced dopant striations in floating-zone silicon crystals
    Sumiji, M
    Azami, T
    Hibiya, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (10): : 6243 - 6247
  • [49] Measurement accuracy analysis of photocarrier radiometric determination of electronic transport parameters of silicon wafers
    Mandelis, A. (mandelis@mie.utoronto.ca), 1600, American Institute of Physics Inc. (97):
  • [50] The effect of temperature on measurement accuracy
    Khoiri, H. A.
    Isnaini, W.
    Edison, T. A.
    1ST INTERNATIONAL CONFERENCE ON ENGINEERING AND APPLIED SCIENCE, 2019, 1381