Growth of HfO2/TiO2 nanolaminates by atomic layer deposition and HfO2-TiO2 by atomic partial layer deposition

被引:57
|
作者
Hernandez-Arriaga, H. [1 ]
Lopez-Luna, E. [1 ]
Martinez-Guerra, E. [2 ]
Turrubiartes, M. M. [1 ]
Rodriguez, A. G. [1 ]
Vidal, M. A. [1 ]
机构
[1] Univ Autonoma San Luis Potosi UASLP, Coordinac Innovac & Aplicaci Ciencia & Tecnol, Alvaro Obregon 64, San Luis Potosi 78000, Mexico
[2] Ctr Invest Mat Avanzados SC, Unidad Monterrey PIIT, Apodaca 66600, Nuevo Leon, Mexico
关键词
RAY PHOTOELECTRON-SPECTROSCOPY; THIN-FILMS; XPS ANALYSIS; TI; 2P; OXIDATION; OXIDE; SI; SPECTRA; SURFACE;
D O I
10.1063/1.4975676
中图分类号
O59 [应用物理学];
学科分类号
摘要
A novel growth technique, called atomic partial layer deposition (APLD), has been proposed to expand the applications of, and the research in, atomic layer deposition (ALD). This technique allows the possibility for the fabrication of well-controlled alloys on a single atomic layer scale. To demonstrate the capabilities of this technique, samples of HfO2 and TiO2 were prepared as conventional ALD nanolaminates through the repeated exposure of the separated metal-precursor and reactant. Subsequently, HfO2-TiO2 APLD growth mode samples were obtained by varying the precursor doses and exposure times to obtain a fractional coverage in the monolayer of Hf and Ti. The thickness and structure of the samples were studied by X-ray reflectivity. The surface topography was studied using atomic force microscopy along with Kelvin probe force microscopy for surface potential mapping. Clear differences on the surface, compared with the conventional HfO2/TiO2 ALD nanolaminates, were observed, which confirmed the HfO2-TiO2 APLD growth. The films were analyzed using X-ray photoelectron spectroscopy (XPS) depth profile scans and angle resolved XPS, where well-defined HfO2 and TiO2 contributions were found for both the conventional and APLD mode samples, and an additional contribution, assigned to a ternary phase Hf-Ti-O, in the APLD grown films was observed. This result confirms that Hf and Ti form an alloy in a monolayer by APLD mode growth.
引用
收藏
页数:11
相关论文
共 50 条
  • [11] Area-Selective Atomic Layer Deposition of TiN, TiO2, and HfO2 on Silicon Nitride with inhibition on Amorphous Carbon
    Stevens, Eric
    Tomczak, Yoann
    Chan, B. T.
    Sanchez, Efrain Altamirano
    Parsons, Gregory N.
    Delabie, Annelies
    CHEMISTRY OF MATERIALS, 2018, 30 (10) : 3223 - 3232
  • [12] Atomic Layer Deposition and Properties of HfO2-Al2O3 Nanolaminates
    Kukli, Kaupo
    Kemell, Marianna
    Castan, Helena
    Duenas, Salvador
    Seemen, Helina
    Rahn, Mihkel
    Link, Joosep
    Stern, Raivo
    Ritala, Mikko
    Leskela, Markku
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2018, 7 (09) : P501 - P508
  • [13] Role of Temperature, Pressure, and Surface Oxygen Migration in the Initial Atomic Layer Deposition of HfO2 on Anatase TiO2 (101)
    D'Acunto, Giulio
    Jones, Rosemary
    Ramirez, Lucia Perez
    Shayesteh, Payam
    Kokkonen, Esko
    Rehman, Foqia
    Lim, Florence
    Bournel, Fabrice
    Gallet, Jean-Jacques
    Timm, Rainer
    Schnadt, Joachim
    JOURNAL OF PHYSICAL CHEMISTRY C, 2022, 126 (29): : 12210 - 12221
  • [14] Selective Atomic Layer Deposition of TiO2
    Ahles, Christopher
    Choi, Jong
    Wong, Keith
    Nemani, Srinivas
    Kummel, Andrew
    2019 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA), 2019,
  • [15] In situ study of HfO2 atomic layer deposition on InP(100)
    Dong, H.
    Brennan, B.
    Zhernokletov, D.
    Kim, J.
    Hinkle, C. L.
    Wallace, R. M.
    APPLIED PHYSICS LETTERS, 2013, 102 (17)
  • [16] Characterization of Al Incorporation into HfO2 Dielectric by Atomic Layer Deposition
    Rahman, Md. Mamunur
    Kim, Jun-Gyu
    Kim, Dae-Hyun
    Kim, Tae-Woo
    MICROMACHINES, 2019, 10 (06)
  • [17] Introducing densification mechanisms into the modelling of HfO2 atomic layer deposition
    Mastail, C.
    Lanthony, C.
    Olivier, S.
    Ducere, J. -M.
    Landa, G.
    Esteve, A.
    Rouhani, M. Djafari
    Richard, N.
    Dkhissi, A.
    THIN SOLID FILMS, 2012, 520 (14) : 4559 - 4563
  • [18] Resistive switching characteristics of HfO2 grown by atomic layer deposition
    Kim, Kyong-Rae
    Park, In-Sung
    Hong, Jin Pyo
    Lee, Sang Seol
    Choi, Bang Lim
    Ahn, Jinho
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2006, 49 : S548 - S551
  • [19] Atomic layer deposition of HfO2 and Si nitride on Ge substrates
    Zhu, Shiyang
    Nakajima, Anri
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (12): : 7699 - 7701
  • [20] Chlorine-mediated atomic layer deposition of HfO2 on graphene
    Wilson, Peter M.
    Chin, Matt L.
    Ekuma, Chinedu E.
    Najmaei, Sina
    Price, Katherine M.
    Schiros, Theanne
    Dubey, Madan
    Hone, James
    JOURNAL OF MATERIALS CHEMISTRY C, 2021, 9 (48) : 17437 - 17443