Novel approach for simple fabrication of high-performance InP-switch matrix based on laser-amplifier gates

被引：10
|
作者：
Dorgeuille, F
Mersali, B
Feuillade, M
Sainson, S
Slempkes, S
Foucher, M
机构：
[1] France Telecom., CNET, Laboratoire de Bagneux
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1996年 / 8卷 / 09期
关键词：
D O I：
10.1109/68.531828
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report here on an InP-switch matrix based on laser-amplifier gates with gain- and polarization-insensitive (as low as 1 dB) operation, A novel integration scheme is demonstrated that provides over 10 dB net chip gain for both input polarizations. Fiber-to-fiber operation with gain can moreover be obtained. Design and switching characteristics are detailed.
引用
收藏
页码：1178 / 1180
页数：3
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