Monolayer nitridation of Si(001) surfaces

被引：7
|
作者：
Morita, Y
Ishida, T
Tokumoto, H
机构：
[1] Joint Res Ctr Atom Technol, Tsukuba, Ibaraki 3058562, Japan
[2] Natl Inst Adv Ind Sci & Technol, AIST, Tsukuba, Ibaraki 3058562, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2002年 / 41卷 / 4B期
关键词：
scanning tunneling microscopy; silicon nitride; nitridation; silicon; surface structure;
D O I：
10.1143/JJAP.41.2459
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Well-ordered nitrogen-covered Si(001) surfaces were formed for the first time by thermal nitridation using an N-2/H-2 gas mixture. The scanning tunneling microscope images showed clear Si(001)-2 x 2 reconstruction over the entire surface. The ordered structure of the nitrided surfaces can be explained by a model in which the surface nitridation by N-2 and the termination of the remaining Si dangling bonds by hydrogen atoms occur simultaneously to minimize the surface free energy during the nitridation reaction.
引用
收藏
页码：2459 / 2462
页数：4
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