Preparation and properties of inverse perovskite Mn3GaN thin films and heterostructures

被引：17
|
作者：
Tashiro, H. [1 ]
Suzuki, R. [1 ]
Miyawaki, T. [1 ]
Ueda, K. [1 ]
Asano, H. [1 ]
机构：
[1] Nagoya Univ, Dept Crystalline Mat Sci, Nagoya, Aichi 4648603, Japan
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2013年 / 63卷 / 03期
关键词：
Mn3GaN; Inverse perovskite structure; Magnetocapacitance; MANGANESE;
D O I：
10.3938/jkps.63.299
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Thin films and heterostructures of Mn3GaN with an inverse perovskite structure were grown epitaxially on SrTiO3 (001) and (La0.18Sr0.82)(Al0.59Ta0.41)O-3 (001) (LSAT) substrates by ion beam sputtering, and their structural and electrical properties have been investigated. Mn3GaN epitaxial thin films showed metallic behavior of temperature-dependent resistivity with a small maximum at 290-340 K. The maximum resistivity could be attributed to the magnetic transition from antiferromagnetism to paramagnetism. It has been found that epitaxial heterostructures formed by ferroelectric Ba0.7Sr0.3TiO3 and Mn3GaN layers exhibit a large magnetocapacitance effect of more than 2000% in an applied magnetic filed of 1.5 T.
引用
收藏
页码：299 / 301
页数：3
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