From 2-Dimensional Lithography To 3-Dimensional Structures

被引：1
|
作者：
van Zeijl, H. W. [1 ]
Wei, J. [1 ]
Shen, C. [1 ]
Verhaar, T. M. [1 ]
Maury, P. [2 ]
Sarro, P. M. [1 ]
机构：
[1] Delft Univ Technol, DIMES, Delft, Netherlands
[2] ASML, NL-5504 Delft, Netherlands
来源：
CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2010 (CSTIC 2010) | 2010年 / 27卷 / 01期
关键词：
D O I：
10.1149/1.3360654
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Lithography for IC device fabrication is a high volume high accuracy production technology. Such production characteristics are also attractive for MEMS and 3 dimensional (3D) integration processes. However, advanced lithography has a strong 2 dimensional (2D) nature and is not optimized to fabricate 3D structures. In this work, 5 exposure and etch strategies are discussed to use advanced 2D lithography to fabricate 3D structures.
引用
收藏
页码：421 / 426
页数：6
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