Study of Composite Cathodes in Electron Field Emission Devices: Relative Contributions of Resonant and Sequential Tunneling

被引:0
|
作者
Filip, Valeriu [1 ,2 ]
Wong, Hei [2 ]
Tam, Wing-Shan [3 ]
Kok, Chi-Wah [3 ]
机构
[1] Univ Bucharest, Fac Phys, 405 Atomistilor Str,POB MG-11, Bucharest 077125, Magurele, Romania
[2] Zhejiang Univ, Inst Microelect & Photon, 38 Zheda Rd, Hangzhou 310027, Zhejiang, Peoples R China
[3] Canaan Semicond Ltd, Wah Yiu Ind Ctr, Unit 8, 12-F, Shatin, Hong Kong, Peoples R China
关键词
electron field emission; sequential tunneling; resonant tunneling;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A simple model of a hetero-structured cathode for electron field emission was developed in order to compare resonant and sequential electron field emission currents. These two components were simultaneously computed through an iterative process. The model assumes that a certain fraction of the batch of electrons that failed to resonantly transit the structure will end up in its quasi-bound states. It was found that, while various slope changes appear in both current-field characteristics, for the sequential tunneling emission, such features are merely interference effects occurring in the potential energy barrier, prior to the electron's transition in the quasi-bound states. Thus, various space charges develop in the structure and reacts back on both the sequential and the resonant parts of the current.
引用
收藏
页数:2
相关论文
共 50 条
  • [41] OBSERVATION OF ELECTRON RESONANT TUNNELING IN A LATERAL DUAL-GATE RESONANT TUNNELING FIELD-EFFECT TRANSISTOR
    CHOU, SY
    ALLEE, DR
    PEASE, RFW
    HARRIS, JS
    APPLIED PHYSICS LETTERS, 1989, 55 (02) : 176 - 178
  • [42] Electron emission Si-based resonant-tunneling diode
    Evtukh, A.
    Goncharuk, N.
    Litovchenko, V.
    Mimura, H.
    2011 24TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE (IVNC), 2011, : 85 - +
  • [43] Electron emission properties of Spindt-type platinum field emission cathodes
    Gotoh, Y
    Nagao, M
    Nozaki, D
    Utsumi, K
    Inoue, K
    Nakatani, T
    Sakashita, T
    Betsui, K
    Tsuji, H
    Ishikawa, J
    JOURNAL OF APPLIED PHYSICS, 2004, 95 (03) : 1537 - 1549
  • [44] ABERRATIONS OF EMISSION CATHODES - NANOMETER DIAMETER FIELD-EMISSION ELECTRON SOURCES
    SCHEINFEIN, MR
    QIAN, W
    SPENCE, JCH
    JOURNAL OF APPLIED PHYSICS, 1993, 73 (05) : 2057 - 2068
  • [45] Electron field emission from cathodes with Si and SiGe nanoclusters
    Evtukh, A.
    Litovchenko, V.
    Semenenko, M.
    Steblova, O.
    Yukhimchuk, V.
    Yilmazoglu, O.
    Hartnagel, H.
    Mimura, H.
    2012 25TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE (IVNC), 2012, : 100 - +
  • [46] Multiparticle effects in nonequilibrium electron tunneling and field emission
    Komnik, A
    Gogolin, AO
    PHYSICAL REVIEW B, 2002, 66 (03): : 354071 - 3540721
  • [47] Shaping electron field emission by ultrathin multilayered structure cathodes
    Semet, V.
    Binh, Vu Thien
    Tsu, R.
    MICROELECTRONICS JOURNAL, 2008, 39 (3-4) : 607 - 616
  • [48] ELECTRON FIELD-EMISSION FROM SELECTIVELY CONTAMINATED CATHODES
    JIMENEZ, M
    NOER, RJ
    JOUVE, G
    ANTOINE, C
    JODET, J
    BONIN, B
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1993, 26 (09) : 1503 - 1509
  • [49] INSPECTION OF FIELD-EMISSION CATHODES BY MEANS OF ELECTRON MICROSCOPES
    SHIROKOV, EG
    PIROGOV, VK
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1964, (01) : 238 - &
  • [50] Resonant tunneling at electron field emission from Si tips coated with SiO2(Si) films
    Evtukh, A. A.
    Pylypova, O., V
    Martyniuk, O.
    Mimura, H.
    APPLIED NANOSCIENCE, 2018, 8 (05) : 931 - 935