Impact of Al-Ion Implantation on the Formation of Deep Defects in n-Type 4H-SiC

被引：0

作者：

Weisse, Julietta ^{[1
]}

Csato, Constantin ^{[2
]}

Hauck, Martin ^{[3
]}

Erlekampf, Jurgen ^{[4
]}

Akhmadaliev, Shavkat ^{[5
]}

Rommel, Mathias ^{[4
]}

Mitlehner, Heinz ^{[4
]}

Rueb, Michael ^{[6
]}

Krieger, Michael ^{[3
]}

Bauer, Anton ^{[4
]}

Haeublein, Volker ^{[4
]}

Erlbacher, Tobias ^{[4
]}

Frey, Lothar ^{[4
]}

机构：

[1] Friedrich Alexander Univ Erlangen Nuremberg, Chair Electron Devices, Erlangen, Germany

[2] Mi2 Factory GmbH, Jena, Germany

[3] Friedrich Alexander Univ Erlangen Nuremberg, Chair Appl Phys, Erlangen, Germany

[4] Fraunhofer IISB, Erlangen, Germany

[5] Helmholtz Zentrum Dresden Rossendorf, Dresden, Germany

[6] Mi2 Factory GmbH, Ernst Abbe Hsch Jena, Jena, Germany

来源：

2018 22ND INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2018) | 2018年

关键词：

aluminum; high energy ion implantation; energy filter implantation; EFII; defects; compensation; Deep Level Transient Spectroscopy; DLTS; Hall Effect; 4H-SiC;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this work, deep defects in an aluminum-implanted 4H-SiC n-type epitaxy are discussed in dependence on following influencing factors: concentration of implanted aluminum, implantation energy, implantation at 500 degrees C and at room temperature, as well as ascending or descending order of implantation energies during ion implantation using Gaussian profiles. The compensation ratio, which reaches values up to 90% of the implanted aluminum concentration, is determined by Hall Effect measurements. Compensating defect centers (Z(1/2)-, ONx-defects) are detected by Deep Level Transient Spectroscopy after high energy ion implantation using an energy filter, followed by an annealing and an oxidation process.

引用

页码：66 / 69

页数：4

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