Structure and electrical properties of Mo back contact for Cu(In, Ga)Se2 solar cells

被引：34

作者：

Wu, Hsiao-Min ^{[1
]}

Liang, Shih-Chang ^{[1
]}

Lin, Yao-Leng ^{[1
]}

Ni, Cuo-Yo ^{[1
]}

Bor, Hui-Yun ^{[1
]}

Tsai, Du-Cheng ^{[2
]}

Shieu, Fuh-Sheng ^{[2
]}

机构：

[1] Chung Shan Inst Sci & Technol, Mat & Electroopt Res Div, Lung Tan 32599, Taiwan

[2] Natl Chung Hsing Univ, Dept Mat Sci & Engn, Taichung 402, Taiwan

来源：

VACUUM | 2012年 / 86卷 / 12期

关键词：

Molybdenum; Thin film; Sputtering; CIGS; THIN-FILMS; CU(IN; GA)SE-2/MO INTERFACE; COATINGS; CUINSE2;

D O I：

10.1016/j.vacuum.2012.04.036

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Mo layers were deposited on soda lime glass via DC magnetron sputtering of a Mo target in a pure Ar atmosphere. The structure and electrical resistivity of Mo thin films, which may be varied by controlling the sputtering pressure, were investigated. The films showed (110) preferred orientation regardless of the working pressure. Films sputtered at low working pressure had low resistivity but adhered poorly to glass. A study of the deposition of a Mo bilayer was conducted. Optimum properties of the Mo bilayer were obtained when the bottom layer was deposited at 10 mtorr and the top layer was deposited at 2.5 mtorr. The extremely low resistivity of 6.57 mu Omega-cm was obtained, which is better than other literatures. A Cu(In, Ga)Se-2 cell fabricated on a Mo film sputtered under optimized conditions showed 10.40% efficiency. (C) 2012 Elsevier Ltd. All rights reserved.

引用

页码：1916 / 1919

页数：4

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