Photoreflectance characterization on the InAlAs-InGaAs heterojunction bipolar transistors

被引：6

作者：

Chen, YH

Jan, GJ

机构：

[1] NATL TAIWAN UNIV, DEPT ELECT ENGN, TAIPEI 10764, TAIWAN

[2] NATL TAIWAN UNIV, INST ELECTROOPT ENGN, TAIPEI 10764, TAIWAN

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1997年 / 33卷 / 04期

关键词：

Franz-Keldysh oscillations; heterojunction bipolar transistor (HBT); InAlAs-InGaAs HBT; molecular beam epitaxy; photoreflectance; two-dimensional electron gas; 2-DIMENSIONAL ELECTRON-GAS; ROOM-TEMPERATURE PHOTOREFLECTANCE; MODULATION-DOPED HETEROJUNCTIONS; SEMICONDUCTOR MICROSTRUCTURES; ELECTROMODULATION SPECTRA; OFFSET VOLTAGE; QUANTUM-WELLS; LINE-SHAPE; SPECTROSCOPY; ELECTROREFLECTANCE;

D O I：

10.1109/3.563386

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Characterization of InAlAs-InGaAs heterojunction bipolar transistors (HBT's) with different spacer thickness inserted between emitter and base grown by molecular beam epitaxy has been performed by photoreflectance (PR) measurement. Analysis of the PR spectra above the fundamental band edge of InAlAs has enabled us to deduce the built-in electric field at the emitter-base junction, so the energy spike at the emitter side can be obtained. The two-dimensional electron gas (2-DEG) accumulated in the spacer channel has also been characterized. Both parameters mentioned above are very important for the performance of HBT's electrical characteristics.

引用

页码：574 / 579

页数：6

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