Oxygen vacancy effect on room-temperature ferromagnetism of rutile Co:TiO2 thin films

被引：55

作者：

Yan, Wensheng ^{[1
]}

Sun, Zhihu ^{[1
]}

Pan, Zhiyun ^{[1
]}

Liu, Qinghua ^{[1
]}

Yao, Tao ^{[1
]}

Wu, Ziyu ^{[1
]}

Song, Cheng ^{[2
]}

Zeng, Fei ^{[2
]}

Xie, Yaning ^{[3
]}

Hu, Tiandou ^{[3
]}

Wei, Shiqiang ^{[1
]}

机构：

[1] Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Anhui, Peoples R China

[2] Tsinghua Univ, Adv Mat Lab, Dept Mat Sci & Engn, Beijing 100084, Peoples R China

[3] Chinese Acad Sci, Inst High Energy Phys, Beijing Synchrotron Radiat Facil, Beijing 100039, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 04期

基金：

中国国家自然科学基金;

关键词：

ab initio calculations; annealing; cobalt; electronic structure; ferromagnetic materials; impurity states; magnetic thin films; semimagnetic semiconductors; titanium compounds; XANES; CO-DOPED TIO2; OXIDES;

D O I：

10.1063/1.3075844

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The x-ray absorption near edge structure spectroscopy and first-principles calculations were combined to study the local and electronic structures of rutile Co:TiO2 thin film with room-temperature ferromagnetism. It was revealed that the Co(Ti)2+ substituting the Ti site forms Co(Ti)p 2+-V-O complex with the O vacancy generated in the annealing process. The O vacancy induces a spin-split donor impurity band with a t(2g) character within the gap region. We proposed that the strong exchange interaction between the localized carriers captured by O vacancy and the substitutional Co ions leads to the ferromagnetism of the Co:TiO2 thin film.

引用

页数：3

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