Thermal Laser Attack and High Temperature Heating on HfO2-based OxRAM Cells

被引：0

作者：

Krakovinsky, A. ^{[1
,3
]}

Bocquet, M. ^{[1
]}

Wacquez, R. ^{[3
]}

Section, J. Coignus ^{[2
]}

Portal, J-M. ^{[1
]}

机构：

[1] CEA, DRT, DPACA, Lab SAS,Ctr Microelect Provence, Site Georges Charpak,880 Ave Mimet, F-13120 Gardanne, France

[2] CEA, LETI, Minatec Campus,17 Ave Martyrs, F-38054 Grenoble, France

[3] Aix Marseille Univ, CNRS, UMR 7334, IM2NP, Ave Escadrille Normandie Niemen,Case 142, F-13397 Marseille 20, France

来源：

2017 IEEE 23RD INTERNATIONAL SYMPOSIUM ON ON-LINE TESTING AND ROBUST SYSTEM DESIGN (IOLTS) | 2017年

关键词：

OxRAM; Laser; Security; Integrity; HfO2; 1T1R; Retention; Thermal Attacks; Countermeasure;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

The last 10 years have seen the rise of new NVM technologies as alternative solutions to Flash technology, which is facing downsizing issues. Apart from offering higher performance than the state of the art of Flash, one of their key features is lower power consumption, which makes them even more suitable for the IoT era. But one of the other main concerns regarding IoT is data security, which is yet to he evaluated for emerging NVM. Our previous work aimed at putting under test the integrity of HfO2 based resistive RAM (OxRAM cells). Bit-set occurrences were found after thermal laser attacks. This present work investigates the difference in behaviour when a selector is added to the resistive element, thanks to attack on different stacks. The results obtained give interesting tracks for the design of secure ONRANI-based ICs. It also studies the kinetic role of temperature through heating experiments.

引用

页码：85 / 89

页数：5

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