Technological status of Cu(In,Ga)(Se,S)2-based photovoltaics

被引：51

作者：

Reinhard, P. ^{[1
]}

Buecheler, S. ^{[1
]}

Tiwari, A. N. ^{[1
]}

机构：

[1] Empa Swiss Fed Labs Mat Sci & Technol, Lab Thin Films & Photovolta, CH-8600 Dubendorf, Switzerland

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2013年 / 119卷

关键词：

Thin film; Photovoltaics; Cu(In; Ga)(Se; S)(2); CIGS; technology; Solar cell; CU(IN; GA)SE-2; SOLAR-CELLS;

D O I：

10.1016/j.solmat.2013.08.030

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

This report presents a selective overview of the technological status of thin film photovoltaics based on chalcopyrite compound Cu(In,Ga)(Se,S)(2) (CIGSSe, or CIGSe if the material does not contain any sulphur) absorber layers. It is not intended to provide a complete list of all active research laboratories or companies in the field, but rather to show the exemplary state of the art of different approaches that are currently pursued to produce low-cost, highly efficient CIGSe or CIGSSe solar cells and modules. For an academic perspective and to assess the potentials, we concentrated on deposition processes leading to highest conversion efficiencies or of special technical interest. On the industrial side, the absorber deposition method was chosen as main differentiator. Highest efficiency values are given to the best of our knowledge and no claim is made for the completeness of the review of all important activities in the field. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：287 / 290

页数：4

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