Influence of spin-transfer torque on thermally activated ferromagnetic resonance excitations in magnetic tunnel junctions
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作者:
Petit, S.
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Univ Grenoble 1, CEA CNRS INPG, SPINTEC, F-38054 Grenoble, France
CEA INAC, F-38054 Grenoble, FranceUniv Grenoble 1, CEA CNRS INPG, SPINTEC, F-38054 Grenoble, France
Petit, S.
[1
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de Mestier, N.
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Univ Grenoble 1, CEA CNRS INPG, SPINTEC, F-38054 Grenoble, France
CEA INAC, F-38054 Grenoble, FranceUniv Grenoble 1, CEA CNRS INPG, SPINTEC, F-38054 Grenoble, France
de Mestier, N.
[1
,2
]
Baraduc, C.
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Univ Grenoble 1, CEA CNRS INPG, SPINTEC, F-38054 Grenoble, France
CEA INAC, F-38054 Grenoble, FranceUniv Grenoble 1, CEA CNRS INPG, SPINTEC, F-38054 Grenoble, France
Baraduc, C.
[1
,2
]
Thirion, C.
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Univ Grenoble 1, CEA CNRS INPG, SPINTEC, F-38054 Grenoble, France
CEA INAC, F-38054 Grenoble, FranceUniv Grenoble 1, CEA CNRS INPG, SPINTEC, F-38054 Grenoble, France
Thirion, C.
[1
,2
]
Liu, Y.
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Headway Technol, Milpitas, CA 95035 USAUniv Grenoble 1, CEA CNRS INPG, SPINTEC, F-38054 Grenoble, France
Liu, Y.
[3
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Li, M.
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Headway Technol, Milpitas, CA 95035 USAUniv Grenoble 1, CEA CNRS INPG, SPINTEC, F-38054 Grenoble, France
Li, M.
[3
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Wang, P.
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Headway Technol, Milpitas, CA 95035 USAUniv Grenoble 1, CEA CNRS INPG, SPINTEC, F-38054 Grenoble, France
Wang, P.
[3
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Dieny, B.
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Univ Grenoble 1, CEA CNRS INPG, SPINTEC, F-38054 Grenoble, France
CEA INAC, F-38054 Grenoble, FranceUniv Grenoble 1, CEA CNRS INPG, SPINTEC, F-38054 Grenoble, France
Dieny, B.
[1
,2
]
机构:
[1] Univ Grenoble 1, CEA CNRS INPG, SPINTEC, F-38054 Grenoble, France
Voltage noise measurements on magnetic tunnel junctions show that thermal fluctuations of the magnetization are either amplified or quenched by subcritical spin-transfer torque depending on the current direction. We present an analytical model that describes the dependence of thermally activated ferromagnetic resonance on bias current. The evolution of the peak amplitude and linewidth with the applied current is directly related to the longitudinal torque, whereas the shift of the resonance frequency is sensitive to the transverse torque. Both spin torque terms are independently extracted from the measured noise spectra. Our results support the general idea that it is more pertinent to describe spin torque in terms of voltage rather than current in magnetic tunnel junctions.
机构:
Zhejiang Univ, Sch Phys, Hangzhou 310030, Peoples R China
Zhejiang Univ, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310030, Peoples R China
Zhejiang HIKSTOR Technol Co LTD, Hangzhou 311300, Peoples R ChinaZhejiang Univ, Sch Phys, Hangzhou 310030, Peoples R China
Chen, Ming-Bo
Li, Kun-Kun
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Zhejiang HIKSTOR Technol Co LTD, Hangzhou 311300, Peoples R ChinaZhejiang Univ, Sch Phys, Hangzhou 310030, Peoples R China
Li, Kun-Kun
Yang, Xiao-Lei
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Zhejiang HIKSTOR Technol Co LTD, Hangzhou 311300, Peoples R ChinaZhejiang Univ, Sch Phys, Hangzhou 310030, Peoples R China
Yang, Xiao-Lei
Peng, Xue
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Zhejiang HIKSTOR Technol Co LTD, Hangzhou 311300, Peoples R ChinaZhejiang Univ, Sch Phys, Hangzhou 310030, Peoples R China
Peng, Xue
Li, Wang-Da
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Zhejiang HIKSTOR Technol Co LTD, Hangzhou 311300, Peoples R ChinaZhejiang Univ, Sch Phys, Hangzhou 310030, Peoples R China
Li, Wang-Da
Liu, En-Long
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Zhejiang HIKSTOR Technol Co LTD, Hangzhou 311300, Peoples R ChinaZhejiang Univ, Sch Phys, Hangzhou 310030, Peoples R China
Liu, En-Long
Wu, Hui-Zhen
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机构:
Zhejiang Univ, Sch Phys, Hangzhou 310030, Peoples R China
Zhejiang Univ, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310030, Peoples R ChinaZhejiang Univ, Sch Phys, Hangzhou 310030, Peoples R China
Wu, Hui-Zhen
He, Shi-Kun
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机构:
Zhejiang HIKSTOR Technol Co LTD, Hangzhou 311300, Peoples R ChinaZhejiang Univ, Sch Phys, Hangzhou 310030, Peoples R China
机构:
School of Physics and State Key Laboratory for Silicon and Advanced Semiconductor Materials, Zhejiang University
Zhejiang HIKSTOR Technology Co,School of Physics and State Key Laboratory for Silicon and Advanced Semiconductor Materials, Zhejiang University
陈明博
李琨琨
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Zhejiang HIKSTOR Technology Co,School of Physics and State Key Laboratory for Silicon and Advanced Semiconductor Materials, Zhejiang University
李琨琨
杨晓蕾
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Zhejiang HIKSTOR Technology Co,School of Physics and State Key Laboratory for Silicon and Advanced Semiconductor Materials, Zhejiang University
杨晓蕾
彭雪
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Zhejiang HIKSTOR Technology Co,School of Physics and State Key Laboratory for Silicon and Advanced Semiconductor Materials, Zhejiang University
彭雪
李旺达
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Zhejiang HIKSTOR Technology Co,School of Physics and State Key Laboratory for Silicon and Advanced Semiconductor Materials, Zhejiang University
李旺达
刘恩隆
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Zhejiang HIKSTOR Technology Co,School of Physics and State Key Laboratory for Silicon and Advanced Semiconductor Materials, Zhejiang University
刘恩隆
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机构:
吴惠桢
何世坤
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机构:
Zhejiang HIKSTOR Technology Co,School of Physics and State Key Laboratory for Silicon and Advanced Semiconductor Materials, Zhejiang University