Structural analysis of SiGe and SiGeC alloys by ab initio total-energy calculations

被引:5
|
作者
Yamada, A [1 ]
Miyazono, N [1 ]
Konagai, M [1 ]
机构
[1] Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, Tokyo 1528552, Japan
关键词
SiGeC; SiGe; ab initio total-energy calculation; strain;
D O I
10.1143/JJAP.38.2566
中图分类号
O59 [应用物理学];
学科分类号
摘要
The structural properties of SiGe and SiGeC alloys are studied by ab initio total-energy calculations. It is found from these calculations that the Ge cluster is a stable structure in a SiGe alloy. Furthermore, it is also demonstrated that Vegard's law is valid in a SiGeC system whose C content is less than 3%. The total-energy calculation of the Si0.72Ge0.25C0.03 alloy in which the number of Ge-C bonds around a C atom varies shows that the energy increases on increasing the number of Ge-C bonds. The mechanism of this increase is considered, taking into account the cohesive energy difference of the SiC and GeC alloys and the atomic configuration around the C atom.
引用
收藏
页码:2566 / 2568
页数:3
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