Wideband mixed lumped-distributed-element 90° and 180° power splitters on silicon substrate for millimeter-wave applications

被引：0

作者：

Chen, Austin Ying-Kuang ^{[1
,2
]}

Liang, Hsiao-Bin ^{[3
]}

Baeyens, Yves ^{[1
]}

Chen, Young-Kai ^{[1
]}

Lin, Jenshan ^{[2
]}

Lin, Yo-Sheng ^{[3
]}

机构：

[1] Alcatel Lucent Bell Labs, 600 Mt Ave, Murray Hill, NJ 07974 USA

[2] Univ Florida, Dept ECE, Gainesville, FL 32611 USA

[3] Natl Chi Nan Univ, Dept Elect Engn, Nantou, Taiwan

来源：

2008 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, VOLS 1 AND 2 | 2008年

关键词：

image rejection; lumped-distributed-element; thin-film microstrip transmission line; millimeter-wave (MMW); power splitters; SiGe;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents two millimeter-wave lumped-distributed 90 degrees and 180 degrees power splitters fabricated in the back-end-of-the-line (BEOL) of a 0.18 mu m SiGe BiCMOS technology. The 180 degrees and 90 degrees power splitters based on mixed lumped-distributed-element three-port Wilkinson power divider with phase shifters at the outputs are shown to achieve an amplitude balance of better than 0.05 dB and 0.21 dB, respectively, at 77 GHz. The return losses for both power splitters are better than 12 dB from 70 GHz to 80 GHz The effective areas of the 180 degrees and 90 degrees splitters are 240 x 440 mu m(2) and 220 x 400 mu m(2), respectively.

引用

页码：403 / +

页数：2

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