Effect of surface potential distribution on corrosion behavior of Cu/Al interface in Cu wire bonding applications

被引：6

作者：

Mokhtari, Omid ^{[1
]}

Nishikawa, Hiroshi ^{[1
]}

机构：

[1] Osaka Univ, Joining & Welding Res Inst, 11-1 Mihogaoka, Ibaraki, Osaka 5670047, Japan

来源：

MICROELECTRONICS RELIABILITY | 2020年 / 113卷

关键词：

Surface potential difference; Cu wire bonding; Galvanic corrosion; Atomic force microscopy; Microelectronics packaging; Microelectronic interconnects; SCANNING KELVIN PROBE; FORCE MICROSCOPY; AL-CU; INTERMETALLIC COMPOUNDS; ALUMINUM;

D O I：

10.1016/j.microrel.2020.113942

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

As Cu is appearing to be a promising alternative for Au in wire bonding applications the corrosion behavior of the Cu/Al intermetallic compounds (IMCs) is becoming a concern. In this study, the corrosion behavior of Cu/Al IMC layers in NaCl solution is investigated. Among Cu9Al4, CuAl and CuAl2 IMCs only CuAl IMC appears to be corroded. The surface potential difference between Cu, Al, and Cu/Al IMCs are measured using scanning Kelvin probe force microscopy and the largest surface potential difference appears to be between Cu9Al4 and CuAl suggesting the formation of a galvanic cell at the interface between Cu9Al4 and CuAl causing CuAl to act as the anode.

引用

页数：8

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