Effect of surface potential distribution on corrosion behavior of Cu/Al interface in Cu wire bonding applications

被引:6
|
作者
Mokhtari, Omid [1 ]
Nishikawa, Hiroshi [1 ]
机构
[1] Osaka Univ, Joining & Welding Res Inst, 11-1 Mihogaoka, Ibaraki, Osaka 5670047, Japan
关键词
Surface potential difference; Cu wire bonding; Galvanic corrosion; Atomic force microscopy; Microelectronics packaging; Microelectronic interconnects; SCANNING KELVIN PROBE; FORCE MICROSCOPY; AL-CU; INTERMETALLIC COMPOUNDS; ALUMINUM;
D O I
10.1016/j.microrel.2020.113942
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
As Cu is appearing to be a promising alternative for Au in wire bonding applications the corrosion behavior of the Cu/Al intermetallic compounds (IMCs) is becoming a concern. In this study, the corrosion behavior of Cu/Al IMC layers in NaCl solution is investigated. Among Cu9Al4, CuAl and CuAl2 IMCs only CuAl IMC appears to be corroded. The surface potential difference between Cu, Al, and Cu/Al IMCs are measured using scanning Kelvin probe force microscopy and the largest surface potential difference appears to be between Cu9Al4 and CuAl suggesting the formation of a galvanic cell at the interface between Cu9Al4 and CuAl causing CuAl to act as the anode.
引用
收藏
页数:8
相关论文
共 50 条
  • [1] Corrosion Mechanisms of Cu Wire Bonding on Al Pads
    Qin, Wentao
    Anderson, Tom
    Barrientos, Denise
    Anderson, Harold
    Chang, George
    2018 IEEE 68TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC 2018), 2018, : 1446 - 1454
  • [2] Oxidation and Corrosion of Au/Al and Cu/Al in Wire bonding Assembly
    Lee, Teck Kheng
    Breach, C. D.
    Chong, Wee Ling
    Goh, Chwee Sim
    2012 13TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY & HIGH DENSITY PACKAGING (ICEPT-HDP 2012), 2012, : 244 - 249
  • [3] Corrosion of the Cu/Al Interface in Cu-Wire-Bonded Integrated Circuits
    Osenbach, John
    Wang, B. Q.
    Emerich, Sue
    DeLucca, John
    Meng, Dongmei
    2013 IEEE 63RD ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC), 2013, : 1574 - 1586
  • [4] Investigation of growth behavior of Al-Cu intermetallic compounds in Cu wire bonding
    Chen, Jiunn
    Lai, Yi-Shao
    Wang, Yi-Wun
    Kao, C. R.
    MICROELECTRONICS RELIABILITY, 2011, 51 (01) : 125 - 129
  • [5] Simulation of intergranular crack extension at Cu/Al wire bonding interface
    Yao, Jingguang
    Zhou, Hongliang
    Cao, Jun
    Lu, Jicun
    Xu, Xiaoning
    Ming, Pingmei
    Wang, Ziming
    Persic, John
    MICROELECTRONICS RELIABILITY, 2025, 166
  • [6] Corrosion-induced degradation and its mechanism study of Cu-Al interface for Cu-wire bonding under HAST conditions
    Liu, Chien-Pan
    Chang, Shoou-Jinn
    Liu, Yen-Fu
    Su, James
    JOURNAL OF ALLOYS AND COMPOUNDS, 2020, 825
  • [7] Effect of bonding interface on delamination behavior of drawn Cu/Al bar clad material
    Lee, Sangmok
    Lee, Min-Geun
    Lee, Sang-Pill
    Lee, Geun-Ahn
    Kim, Yong-Bae
    Lee, Jong-Sup
    Bae, Dong-Su
    TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA, 2012, 22 : S645 - S649
  • [8] Effect of bonding interface on delamination behavior of drawn Cu/Al bar clad material
    Sangmok LEE
    Min-Geun LEE
    Sang-Pill LEE
    Geun-Ahn LEE
    Yong-Bae KIM
    Jong-Sup LEE
    Dong-Su BAE
    TransactionsofNonferrousMetalsSocietyofChina, 2012, 22(S3) (S3) : 645 - 649
  • [9] Interface Structure of Cu Wire Bonding on Cu Substrate with Sn Plating
    Fujiwara, Shinichi
    Dauskardt, Reinhold H.
    MATERIALS TRANSACTIONS, 2012, 53 (12) : 2091 - 2096
  • [10] Interface Structure of Cu Wire Bonding on Cu Substrate with Sn Plating
    Fujiwara, Shinichi
    Dauskardt, Reinhold H.
    JOURNAL OF THE JAPAN INSTITUTE OF METALS AND MATERIALS, 2014, 78 (05) : 177 - 182