Dielectric tunability of graded barium strontium titanate multilayers: Effect of thermal strains
被引:40
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作者:
Okatan, M. B.
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Univ Connecticut, Mat Sci & Engn Program, Dept Chem Mat & Biomol Engn, Storrs, CT 06269 USA
Univ Connecticut, Inst Mat Sci, Storrs, CT 06269 USAUniv Connecticut, Mat Sci & Engn Program, Dept Chem Mat & Biomol Engn, Storrs, CT 06269 USA
Okatan, M. B.
[1
,2
]
Cole, M. W.
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USA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUniv Connecticut, Mat Sci & Engn Program, Dept Chem Mat & Biomol Engn, Storrs, CT 06269 USA
Cole, M. W.
[3
]
Alpay, S. P.
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机构:
Univ Connecticut, Mat Sci & Engn Program, Dept Chem Mat & Biomol Engn, Storrs, CT 06269 USA
Univ Connecticut, Inst Mat Sci, Storrs, CT 06269 USAUniv Connecticut, Mat Sci & Engn Program, Dept Chem Mat & Biomol Engn, Storrs, CT 06269 USA
Alpay, S. P.
[1
,2
]
机构:
[1] Univ Connecticut, Mat Sci & Engn Program, Dept Chem Mat & Biomol Engn, Storrs, CT 06269 USA
[2] Univ Connecticut, Inst Mat Sci, Storrs, CT 06269 USA
[3] USA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
A thermodynamic model was developed to analyze the effect of the difference in the thermal expansion coefficient (TEC) of a multilayered barium strontium titanate Ba1-ySryTiO3 (BST) ferroelectric heterostructure and a passive substrate on the dielectric properties by taking into account electrostatic and electromechanical interactions between the ferroelectric layers. Results show that the dielectric constant and tunability can be maximized by minimizing the TEC mismatch. Furthermore, lower processing temperatures lead to lower thermal strains and thus to better dielectric properties. We also provide a numerical analysis describing the effect of thermal strains on dielectric properties of a compositionally graded trilayer consisting of BST 60/40, BST 75/25, and BST 90/10 on a variety of substrates including Si, sapphire (alpha-Al2O3), SrTiO3, MgO, and LaAlO3. The multilayer BST heterostructure on Si is expected to experience high in-plane tensile strains due to the large TEC mismatch, resulting in dielectric permittivities and tunabilities lower compared to the same multilayer on SrTiO3 or LaAlO3 for which there is a better TEC match. For BST multilayers on MgO, SrTiO3, Si, and sapphire, higher processing temperatures lead to lower dielectric response and tunability.
机构:
McMaster Univ, Dept Mat Sci & Engn, Ceram Res Grp, Hamilton, ON L8S 4L7, CanadaMcMaster Univ, Dept Mat Sci & Engn, Ceram Res Grp, Hamilton, ON L8S 4L7, Canada
Sarkar, P
Sakaguchi, S
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McMaster Univ, Dept Mat Sci & Engn, Ceram Res Grp, Hamilton, ON L8S 4L7, CanadaMcMaster Univ, Dept Mat Sci & Engn, Ceram Res Grp, Hamilton, ON L8S 4L7, Canada
Sakaguchi, S
Yamashita, K
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McMaster Univ, Dept Mat Sci & Engn, Ceram Res Grp, Hamilton, ON L8S 4L7, CanadaMcMaster Univ, Dept Mat Sci & Engn, Ceram Res Grp, Hamilton, ON L8S 4L7, Canada
Yamashita, K
Umegaki, T
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McMaster Univ, Dept Mat Sci & Engn, Ceram Res Grp, Hamilton, ON L8S 4L7, CanadaMcMaster Univ, Dept Mat Sci & Engn, Ceram Res Grp, Hamilton, ON L8S 4L7, Canada
机构:
Univ Connecticut, Dept Chem Mat & Biomol Engn, Mat Sci & Engn Program, Storrs, CT 06269 USAUniv Connecticut, Dept Chem Mat & Biomol Engn, Mat Sci & Engn Program, Storrs, CT 06269 USA
Zhang, J.
Cole, M. W.
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机构:
USA, Res Lab, Weapons & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUniv Connecticut, Dept Chem Mat & Biomol Engn, Mat Sci & Engn Program, Storrs, CT 06269 USA
Cole, M. W.
Alpay, S. P.
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Univ Connecticut, Dept Chem Mat & Biomol Engn, Mat Sci & Engn Program, Storrs, CT 06269 USAUniv Connecticut, Dept Chem Mat & Biomol Engn, Mat Sci & Engn Program, Storrs, CT 06269 USA
机构:Univ Calif Santa Barbara, Coll Engn, Dept Mat, Santa Barbara, CA 93106 USA
Taylor, TR
Hansen, PJ
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机构:Univ Calif Santa Barbara, Coll Engn, Dept Mat, Santa Barbara, CA 93106 USA
Hansen, PJ
Acikel, B
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机构:Univ Calif Santa Barbara, Coll Engn, Dept Mat, Santa Barbara, CA 93106 USA
Acikel, B
Pervez, N
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机构:Univ Calif Santa Barbara, Coll Engn, Dept Mat, Santa Barbara, CA 93106 USA
Pervez, N
York, RA
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机构:Univ Calif Santa Barbara, Coll Engn, Dept Mat, Santa Barbara, CA 93106 USA
York, RA
Streiffer, SK
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机构:Univ Calif Santa Barbara, Coll Engn, Dept Mat, Santa Barbara, CA 93106 USA
Streiffer, SK
Speck, JS
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机构:
Univ Calif Santa Barbara, Coll Engn, Dept Mat, Santa Barbara, CA 93106 USAUniv Calif Santa Barbara, Coll Engn, Dept Mat, Santa Barbara, CA 93106 USA
机构:The Center for the Engineering of Electronic and Acoustic Materials, Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park
HERNER, SB
SELMI, FA
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机构:The Center for the Engineering of Electronic and Acoustic Materials, Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park
SELMI, FA
VARADAN, VV
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机构:The Center for the Engineering of Electronic and Acoustic Materials, Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park
VARADAN, VV
VARADAN, VK
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机构:The Center for the Engineering of Electronic and Acoustic Materials, Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park
机构:
US Army Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUS Army Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
Cole, M. W.
Ngo, E.
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US Army Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUS Army Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
Ngo, E.
Hubbard, C.
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US Army Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUS Army Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
Hubbard, C.
Hirsch, S. G.
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机构:
US Army Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUS Army Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
Hirsch, S. G.
Ivill, M.
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US Army Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUS Army Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
Ivill, M.
Sarney, W. L.
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机构:
US Army Res Lab, Sensors & Electron Devices Directorate, Adelphi, MD 20783 USAUS Army Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
Sarney, W. L.
Zhang, J.
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机构:
Univ Connecticut, Dept Mat Sci & Engn, Storrs, CT 06269 USA
Univ Connecticut, Inst Mat Sci, Storrs, CT 06269 USAUS Army Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
Zhang, J.
Alpay, S. P.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Connecticut, Dept Mat Sci & Engn, Storrs, CT 06269 USA
Univ Connecticut, Inst Mat Sci, Storrs, CT 06269 USAUS Army Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA