Dielectric tunability of graded barium strontium titanate multilayers: Effect of thermal strains

被引:40
|
作者
Okatan, M. B. [1 ,2 ]
Cole, M. W. [3 ]
Alpay, S. P. [1 ,2 ]
机构
[1] Univ Connecticut, Mat Sci & Engn Program, Dept Chem Mat & Biomol Engn, Storrs, CT 06269 USA
[2] Univ Connecticut, Inst Mat Sci, Storrs, CT 06269 USA
[3] USA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
关键词
barium compounds; ferroelectric materials; multilayers; numerical analysis; permittivity; strontium compounds; tensile strength; thermal expansion; thermodynamics;
D O I
10.1063/1.3026719
中图分类号
O59 [应用物理学];
学科分类号
摘要
A thermodynamic model was developed to analyze the effect of the difference in the thermal expansion coefficient (TEC) of a multilayered barium strontium titanate Ba1-ySryTiO3 (BST) ferroelectric heterostructure and a passive substrate on the dielectric properties by taking into account electrostatic and electromechanical interactions between the ferroelectric layers. Results show that the dielectric constant and tunability can be maximized by minimizing the TEC mismatch. Furthermore, lower processing temperatures lead to lower thermal strains and thus to better dielectric properties. We also provide a numerical analysis describing the effect of thermal strains on dielectric properties of a compositionally graded trilayer consisting of BST 60/40, BST 75/25, and BST 90/10 on a variety of substrates including Si, sapphire (alpha-Al2O3), SrTiO3, MgO, and LaAlO3. The multilayer BST heterostructure on Si is expected to experience high in-plane tensile strains due to the large TEC mismatch, resulting in dielectric permittivities and tunabilities lower compared to the same multilayer on SrTiO3 or LaAlO3 for which there is a better TEC match. For BST multilayers on MgO, SrTiO3, Si, and sapphire, higher processing temperatures lead to lower dielectric response and tunability.
引用
收藏
页数:7
相关论文
共 50 条
  • [41] Dielectric Properties of Zr substituted Barium Strontium Titanate
    Alkathy, Mahamoud. S.
    Joseph, Andrews
    Raju, K. C. James
    MATERIALS TODAY-PROCEEDINGS, 2016, 3 (06) : 2321 - 2328
  • [42] Dielectric properties of samarium substituted barium strontium titanate
    Thakur, OP
    Prakash, C
    PHASE TRANSITIONS, 2003, 76 (06) : 567 - 574
  • [43] Functionally-graded barium/strontium titanate by electrophoretic forming
    Sarkar, P
    Sakaguchi, S
    Yamashita, K
    Umegaki, T
    ADVANCES IN DIELECTRIC CERAMIC MATERIALS, 1998, 88 : 183 - 188
  • [44] Pyroelectric properties of barium strontium titanate films: Effect of thermal stresses
    Zhang, J.
    Cole, M. W.
    Alpay, S. P.
    JOURNAL OF APPLIED PHYSICS, 2010, 108 (05)
  • [45] Effect of acceptor and donor dopants on the dielectric and tunable properties of barium strontium titanate
    Liang, XF
    Meng, ZY
    Wu, WB
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2004, 87 (12) : 2218 - 2222
  • [46] Effect of direct-current biasing on the dielectric properties of barium strontium titanate
    Liou, JW
    Chiou, BS
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1997, 80 (12) : 3093 - 3099
  • [47] Effect of bottom electrodes on the dielectric properties of barium strontium titanate thin films
    Yu, HC
    Li, M
    Hui, C
    Xu, AL
    Shao, WW
    THIN SOLID FILMS, 2005, 493 (1-2) : 20 - 23
  • [48] Impact of thermal strain on the dielectric constant of sputtered barium strontium titanate thin films
    Taylor, TR
    Hansen, PJ
    Acikel, B
    Pervez, N
    York, RA
    Streiffer, SK
    Speck, JS
    APPLIED PHYSICS LETTERS, 2002, 80 (11) : 1978 - 1980
  • [49] THE EFFECT OF VARIOUS DOPANTS ON THE DIELECTRIC-PROPERTIES OF BARIUM STRONTIUM-TITANATE
    HERNER, SB
    SELMI, FA
    VARADAN, VV
    VARADAN, VK
    MATERIALS LETTERS, 1993, 15 (5-6) : 317 - 324
  • [50] Enhanced dielectric properties from barium strontium titanate films with strontium titanate buffer layers
    Cole, M. W.
    Ngo, E.
    Hubbard, C.
    Hirsch, S. G.
    Ivill, M.
    Sarney, W. L.
    Zhang, J.
    Alpay, S. P.
    JOURNAL OF APPLIED PHYSICS, 2013, 114 (16)