A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy

被引：42

作者：

Fernandez-Garrido, S. ^{[1
]}

Gacevic, Z.

Calleja, E.

机构：

[1] Univ Politecn Madrid, ISOM, E-28040 Madrid, Spain

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 19期

关键词：

aluminium compounds; III-V semiconductors; indium compounds; molecular beam epitaxial growth; pyrolysis; semiconductor growth; stoichiometry; surface morphology;

D O I：

10.1063/1.3026541

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Indium incorporation and surface morphology of InAlN layers grown on (0001) GaN by plasma-assisted molecular beam epitaxy were investigated as a function of the impinging In flux and the substrate temperature in the 450-610 degrees C range. In incorporation was found to decrease with substrate temperature due to thermal decomposition of the growing layer, while for a given temperature it increased with the impinging In flux until stoichiometry was reached at the growth front. The InN losses during growth followed an Arrhenius behavior characterized by an activation energy of 2.0 eV. A growth diagram highly instrumental to identify optimum growth conditions was established.

引用

页数：3

共 50 条

[11] High quality quaternary InAlGaN alloys grown by plasma-assisted molecular beam epitaxy
Dimakis, E
Georgakilas, A
Kittler, G
Androulidaki, M
Tsagaraki, K
Bellet-Amalric, E
Jalabert, D
Pelekanos, NT
2002 12TH INTERNATIONAL CONFERENCE ON SEMICONDUCTING & INSULATING MATERIALS, 2002, : 60 - 63
[12] Deep Ultraviolet LEDs based on AlGaN Alloys by Plasma-assisted Molecular Beam Epitaxy
Liao, Yitao
Thomidis, Christos
Kao, Chen-kai
Bellotti, Enrico
Moustakas, Theodore D.
2010 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (QELS), 2010,
[13] Growth and characterization of lattice-matched InAlN/GaN Bragg reflectors grown by plasma-assisted molecular beam epitaxy
Gacevic, Z.
Fernandez-Garrido, S.
Calleja, E.
Luna, E.
Trampert, A.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2, 2009, 6 : S643 - S645
[14] Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1)
Budde, Melanie
Remmele, Thilo
Tschammer, Carsten
Feldl, Johannes
Franz, Philipp
Laehnemann, Jonas
Cheng, Zongzhe
Hanke, Michael
Ramsteiner, Manfred
Albrecht, Martin
Bierwagen, Oliver
JOURNAL OF APPLIED PHYSICS, 2020, 127 (01)
[15] In vacancies in InN grown by plasma-assisted molecular beam epitaxy
Reurings, Floris
Tuomisto, Filip
Gallinat, Chad S.
Koblmueller, Gregor
Speck, James S.
APPLIED PHYSICS LETTERS, 2010, 97 (25)
[16] Unintentional Source Incorporation in Plasma-Assisted Molecular Beam Epitaxy
Ishikawa, Fumitaro
Wu, Shudong
Kato, Masakazu
Uchiyama, Masayuki
Higashi, Kotaro
Kondow, Masahiko
JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (12)
[17] GaN doped with neodymium by plasma-assisted molecular beam epitaxy
Readinger, E. D.
Metcalfe, G. D.
Shen, H.
Wraback, M.
APPLIED PHYSICS LETTERS, 2008, 92 (06)
[18] Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1)
Budde, Melanie
Remmele, Thilo
Tschammer, Carsten
Feldl, Johannes
Franz, Philipp
Lähnemann, Jonas
Cheng, Zongzhe
Hanke, Michael
Ramsteiner, Manfred
Albrecht, Martin
Bierwagen, Oliver
1600, American Institute of Physics Inc. (127):
[19] GROWING GAN BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY
BERESFORD, R
JOM-JOURNAL OF THE MINERALS METALS & MATERIALS SOCIETY, 1994, 46 (03): : 54 - 58
[20] Composition Inhomogeneity in Nonpolar (101¯ 0) and Semipolar (202¯ 1) InAlN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy
Sawicka, Marta
Smalc-Koziorowska, Julita
Kryśko, Marcin
Fiuczek, Natalia
Wolny, Pawel
Feduniewicz-Żmuda, Anna
Nowakowski-Szkudlarek, Krzesimir
Turski, Henryk
Skierbiszewski, Czeslaw
Sawicka, Marta (sawicka@unipress.waw.pl), 1600, American Chemical Society (21): : 5223 - 5230

← 1 2 3 4 5 →