In-volume structuring of silicon using picosecond laser pulses

被引：24

作者：

Kaemmer, H. ^{[1
]}

Matthaeus, G. ^{[1
]}

Nolte, S. ^{[1
,2
]}

Chanal, M. ^{[3
]}

Uteza, O. ^{[3
]}

Grojo, D. ^{[3
]}

机构：

[1] Friedrich Schiller Univ Jena, Inst Angew Phys, Albert Einstein Str 15, D-07745 Jena, Germany

[2] Fraunhofer Inst Angew Opt & Feinmech IOF, Albert Einstein Str 7, D-07745 Jena, Germany

[3] Aix Marseille Univ, CNRS, LP3, UMR7341, F-13288 Marseille, France

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2018年 / 124卷 / 04期

基金：

欧洲研究理事会;

关键词：

WRITING WAVE-GUIDES; FEMTOSECOND LASER; CRYSTALLINE SILICON;

D O I：

10.1007/s00339-018-1715-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have demonstrated for the first time the permanent local modification of the bulk of silicon by repeated illumination with infrared (1.55 mu m) picosecond pulses. Furthermore, we evaluated the characteristics of inscribing permanent modifications in the bulk material for different pulse durations from 0.8 to 10 ps in terms of their reproducibility and controllability of their morphology. Our results are based on a simple experimental setup that demonstrates the possibility of using picosecond pulses for the local modification of bulk silicon as a potential alternative to more complex irradiation strategies required for femtosecond pulse processing.

引用

页数：6

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