Lattice-matched InGaAs on InP thermophovoltaic cells

被引：19

作者：

Tuley, R. S. ^{[1
]}

Orr, J. M. S. ^{[1
]}

Nicholas, R. J. ^{[1
]}

Rogers, D. C. ^{[2
]}

Cannard, P. J. ^{[2
]}

Dosanjh, S. ^{[2
]}

机构：

[1] Univ Oxford, Clarendon Lab, Oxford OX1 3PU, England

[2] Ctr Integrated Photon, Martlesham Heath IP5 3RE, Suffolk, England

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2013年 / 28卷 / 01期

基金：

英国工程与自然科学研究理事会;

关键词：

RECOMBINATION; EFFICIENCY; CAPTURE; DEVICES;

D O I：

10.1088/0268-1242/28/1/015013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the fabrication and characterization of lattice matched single junction InGaAs thermophotovoltaic cells grown on InP substrates with an EQE >90% over a broad spectral range. The I-V characteristics of the cells are examined for a range of operating temperatures and illumination conditions. An accurate model of the cell performance, including the flat-spot behaviour exhibited by the cells, is developed using the commercial PC1D package. We use this model to estimate the output of these cells with an example low-cost spectral control system, which suggest that these cells would produce system efficiencies >10%, with the potential for efficiencies >20%.

引用

页数：7

共 50 条

[21] The effect of passivation on the hot electron degradation of lattice-matched InAlAs/InGaAs/InP HEMTs
Menozzi, R
Borgarino, M
Baeyens, Y
vanderZanden, K
VanHove, M
Fantini, F
1997 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1997, : 153 - 156
[22] Electron effective mass and nonparabolicity in InGaAs/InAlAs quantum wells lattice-matched to InP
Kotera, N
Arimoto, H
Miura, N
Shibata, K
Ueki, Y
Tanaka, K
Nakamura, H
Mishima, T
Aiki, K
Washima, M
PHYSICA E, 2001, 11 (2-3): : 219 - 223
[23] DECAY TIMES OF EXCITONS IN LATTICE-MATCHED INGAAS/INP SINGLE QUANTUM-WELLS
BRENER, I
GERSHONI, D
RITTER, D
PANISH, MB
HAMM, RA
APPLIED PHYSICS LETTERS, 1991, 58 (09) : 965 - 967
[24] Optimization of InGaAs(P) photovoltaic cells lattice matched to InP
Emziane, M.
Nicholas, R. J.
JOURNAL OF APPLIED PHYSICS, 2007, 101 (05)
[25] Modeling lattice-matched InP-based multijunction solar cells
Navruz, Tugba Selcen
TURKISH JOURNAL OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCES, 2017, 25 (02) : 1010 - 1020
[26] GROWTH AND CHARACTERIZATION OF INGAASP LATTICE-MATCHED TO INP
HOUSTON, PA
JOURNAL OF MATERIALS SCIENCE, 1981, 16 (11) : 2935 - 2961
[27] Thermal conduction in lattice-matched superlattices of InGaAs/InAlAs
Sood, Aditya
Rowlette, Jeremy A.
Caneau, Catherine G.
Bozorg-Grayeli, Elah
Asheghi, Mehdi
Goodson, Kenneth E.
APPLIED PHYSICS LETTERS, 2014, 105 (05)
[28] Effects of zinc and tellurium doping on minority carrier recombination in lattice-matched and lattice-mismatched InGaAs/InP epitaxial layers and thermophotovoltaic cells
Donetsky, D.
Anikeev, S.
Gu, N.
Dashiell, M.
Ehsani, H.
Newman, F.
Wanlass, M.
Wang, C.
CONFERENCE RECORD OF THE 2006 IEEE 4TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS 1 AND 2, 2006, : 764 - 767
[29] On the diffusion of lattice matched InGaAs/InP microstructures
Bollet, F
Gillin, WP
Hopkinson, M
Gwilliam, R
JOURNAL OF APPLIED PHYSICS, 2003, 93 (07) : 3881 - 3885
[30] On the diffusion of lattice matched InGaAs/InP microstructures
Bollet, F. (w.gillin@qmul.ac.uk), 1600, American Institute of Physics Inc. (93):

← 1 2 3 4 5 →