Lattice-matched InGaAs on InP thermophovoltaic cells

被引：19

作者：

Tuley, R. S. ^{[1
]}

Orr, J. M. S. ^{[1
]}

Nicholas, R. J. ^{[1
]}

Rogers, D. C. ^{[2
]}

Cannard, P. J. ^{[2
]}

Dosanjh, S. ^{[2
]}

机构：

[1] Univ Oxford, Clarendon Lab, Oxford OX1 3PU, England

[2] Ctr Integrated Photon, Martlesham Heath IP5 3RE, Suffolk, England

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2013年 / 28卷 / 01期

基金：

英国工程与自然科学研究理事会;

关键词：

RECOMBINATION; EFFICIENCY; CAPTURE; DEVICES;

D O I：

10.1088/0268-1242/28/1/015013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the fabrication and characterization of lattice matched single junction InGaAs thermophotovoltaic cells grown on InP substrates with an EQE >90% over a broad spectral range. The I-V characteristics of the cells are examined for a range of operating temperatures and illumination conditions. An accurate model of the cell performance, including the flat-spot behaviour exhibited by the cells, is developed using the commercial PC1D package. We use this model to estimate the output of these cells with an example low-cost spectral control system, which suggest that these cells would produce system efficiencies >10%, with the potential for efficiencies >20%.

引用

页数：7

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