Structural, electronic and magnetic properties of Er implanted ZnO thin films

被引：12
|
作者：
Murmu, P. P. [1 ,2 ]
Kennedy, J. [1 ,2 ]
Ruck, B. J. [2 ]
Leveneur, J. [1 ]
机构：
[1] GNS Sci, Natl Isotope Ctr, Lower Hutt 5010, New Zealand
[2] MacDiarmid Inst Adv Mat & Nanotechnol, Wellington 6140, New Zealand
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2015年 / 359卷
关键词：
ZnO; Implantation; RBS; Raman spectroscopy; XANES; RAMAN-SCATTERING; FERROMAGNETISM;
D O I：
10.1016/j.nimb.2015.07.034
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
We report the structural, electronic and magnetic properties of Er implanted and annealed ZnO thin films. The effect of annealing in oxygen-deficient and oxygen-rich conditions was investigated. Rutherford backscattering spectrometry results revealed that the Er atoms are located at the implantation depth of around 13 nm, and annealing conditions had no adverse effect on the Er concentration in the layer. Raman spectroscopy results showed peak related to E-2(high) mode of ZnO indicating enhanced crystalline quality of the Er implanted and annealed ZnO films. X-ray absorption near edge spectroscopy results demonstrated pre-edge features in O K-edge which are attributed to the structural defects in the films. Room temperature magnetic ordering was observed in Er implanted and annealed films, and is mainly assigned to the intrinsic defects in ZnO. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码：1 / 4
页数：4
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