Magnesium doping of GaN by metalorganic chemical vapor deposition

被引：0
|
作者：
Lu, HQ [1 ]
Bhat, I [1 ]
机构：
[1] RENSSELAER POLYTECH INST,DEPT ELECT COMP & SYST ENGN,TROY,NY 12180
来源：
GALLIUM NITRIDE AND RELATED MATERIALS | 1996年 / 395卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：497 / 502
页数：6
相关论文
共 50 条
  • [41] Thermodynamic model of low temperature metalorganic chemical vapor deposition of GaN
    Elyukhin, VA
    García-Salgado, G
    Peña-Sierra, R
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (11) : 9091 - 9094
  • [42] Study of carbon concentration in GaN grown by metalorganic chemical vapor deposition
    Piao, Guanxi
    Ikenaga, Kazutada
    Yano, Yoshiki
    Tokunaga, Hiroki
    Mishima, Akira
    Ban, Yuzaburo
    Tabuchi, Toshiya
    Matsumoto, Koh
    JOURNAL OF CRYSTAL GROWTH, 2016, 456 : 137 - 139
  • [43] Observation of compensation in GaN films grown by metalorganic chemical vapor deposition
    Chen, P
    Chua, SJ
    Zheng, YD
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2001, 4 (06) : 591 - 594
  • [44] Photoreflectance study of GaN film grown by metalorganic chemical vapor deposition
    Yang, K
    Zhang, R
    Zheng, YD
    Qin, LH
    Shen, B
    Shi, HT
    Huang, ZC
    Chen, JC
    III-NITRIDE, SIC AND DIAMOND MATERIALS FOR ELECTRONIC DEVICES, 1996, 423 : 735 - 739
  • [45] Numerical Simulation of GaN Growth in a Metalorganic Chemical Vapor Deposition Process
    Meng, Jiandong
    Jaluria, Yogesh
    JOURNAL OF MANUFACTURING SCIENCE AND ENGINEERING-TRANSACTIONS OF THE ASME, 2013, 135 (06):
  • [46] GaN growth on Si pillar arrays by metalorganic chemical vapor deposition
    Won, Dongjin
    Weng, Xiaojun
    Yuwen, Yu A.
    Ke, Yue
    Kendrick, Chito
    Shen, Haoting
    Mayer, Theresa S.
    Redwing, Joan M.
    JOURNAL OF CRYSTAL GROWTH, 2013, 370 : 259 - 264
  • [47] Controlled growth of GaN nanowires by pulsed metalorganic chemical vapor deposition
    Kipshidze, G
    Yavich, B
    Chandolu, A
    Yun, J
    Kuryatkov, V
    Ahmad, I
    Aurongzeb, D
    Holtz, M
    Temkin, H
    APPLIED PHYSICS LETTERS, 2005, 86 (03) : 1 - 3
  • [48] Fabrication of a GaN lateral polarity junction by metalorganic chemical vapor deposition
    Mita, S.
    Collazo, R.
    Sitar, Z.
    JOURNAL OF CRYSTAL GROWTH, 2009, 311 (10) : 3044 - 3048
  • [49] Epitaxial lateral overgrowth of cubic GaN by metalorganic chemical vapor deposition
    Fu, Y
    Yang, H
    Zhao, DG
    Zheng, XH
    Li, SF
    Sun, YP
    Feng, ZH
    Wang, YT
    Duan, LH
    JOURNAL OF CRYSTAL GROWTH, 2001, 225 (01) : 45 - 49
  • [50] Influence of a SiN mask on GaN layer by metalorganic chemical vapor deposition
    Deok Kyu Kim
    Journal of Materials Science: Materials in Electronics, 2008, 19 : 471 - 475
12345