Lattice location of 12B implanted in Si

被引：2

作者：

Izumikawa, T ^{[1
]}

Matsuta, K

Sato, K

Miyake, T

Mihara, M

Fukuda, M

Zhu, SY

Minamisono, T

机构：

[1] Niigata Univ, Radioisotope Ctr, Niigata 9518510, Japan

[2] Osaka Univ, Dept Phys, Toyonaka, Osaka 5600043, Japan

[3] Osaka Univ, ISIR, Ibaraki, Osaka 5670047, Japan

[4] China Inst Atom Energy, Dept Nucl Phys, Beijing 102413, Peoples R China

[5] Fukui Univ Technol, Dept Applicat Nucl Technol, Fukui 9108505, Japan

来源：

PHYSICA B-CONDENSED MATTER | 2006年 / 376卷

关键词：

thermal atomic jump; dopant impurity; implantation; beta-NMR;

D O I：

10.1016/j.physb.2005.12.051

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The beta-NMR study of B-12 implanted in semiconductor Si was performed to understand dynamic behaviour of the defects. The temperature dependences of the fraction of the implantation sites were measured under two different external magnetic fields. The measurements were well explained by the fast spin-lattice relaxation due to the thermal atomic jump between the identical defect sites. The activation energy of the jump was also deduced as 0.40 +/- 0.04 eV under the external magnetic field of 3.5 kOe. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：193 / 195

页数：3

共 50 条

[31] Radiative Neutron Capture Rate of 11B(n,γ) 12B Reactionfrom the Coulomb Dissociation of 12B
Shubhchintak
Singh, G.
Chatterjee, R.
Dan, M.
FEW-BODY SYSTEMS, 2024, 65 (02)
[32] The role of various mechanisms in the formation of the 12B nucleus in the 10B(t, p)12B reaction
Galanina L.I.
Zelenskaya N.S.
Bulletin of the Russian Academy of Sciences: Physics, 2008, 72 (03) : 305 - 310
[33] Excitation halo states of 12B
Lin, CJ
Liu, ZH
Zhang, HQ
Wu, YW
Yang, F
Ruan, M
CHINESE PHYSICS LETTERS, 2001, 18 (09) : 1183 - 1185
[34] β-decay measurements of 12B with Gammasphere
Alcorta, M.
Fynbo, H. O. U.
Albers, M.
Almaraz-Calderon, S.
Bertone, P. F.
Carnelli, P. F. F.
Carpenter, M. P.
Chiara, C. J.
DiGiovine, B.
Greene, J. P.
Hoffman, C. R.
Janssens, R. V. F.
Lauritsen, T.
Laursen, K. L.
Marley, S. T.
Nair, C.
Nusair, O.
Rehm, K. E.
Seweryniak, D.
Ugalde, C.
Zhu, S.
INPC 2013 - INTERNATIONAL NUCLEAR PHYSICS CONFERENCE, VOL. 2, 2014, 66
[35] Polarization relaxation of 12B in diamond
Izumikawa T.
Mihara M.
Kimura Y.
Sugisaki T.
Takayama G.
Fukutome M.
Watanabe K.
Noguchi N.
Tazawa Y.
Fukuda M.
Matsuta K.
Ohtsubo T.
Kitagawa A.
Sato S.
Interactions, 2024, 245 (01)
[36] MAGNETIC MOMENTS OF 12B AND 12N
SUGIMOTO, K
NAKAI, K
MATUDA, K
MINAMISO.T
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1968, S 24 : 217 - &
[37] Influence of resonances on the 11B(n, ?)12B reaction rate. Capture to the excited states of 12B
Dubovichenko, S. B.
Burkova, N. A.
Tkachenko, A. S.
Dzhazairov-Kakhramanov, A. V.
INTERNATIONAL JOURNAL OF MODERN PHYSICS E, 2023, 32 (02):
[38] LATTICE LOCATION OF BORON IONS IMPLANTED INTO SILICON
FLADDA, G
BJORKQVIST, K
ERIKSSON, L
SIGURD, D
APPLIED PHYSICS LETTERS, 1970, 16 (08) : 313 - +
[39] Lattice location and stability of implanted Cu in Ge
Wahl, U
Correia, JG
Soares, JC
PHYSICA B-CONDENSED MATTER, 2003, 340 : 799 - 802
[40] DETERMINATION OF LOCATION OF OXYGEN IMPLANTED IN SILICON LATTICE
KRYUCHKOV, YY
TIMOSHNIKOV, YA
CHERNOV, IP
SLAVIN, NV
AZIKOV, BS
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (07): : 829 - 830

← 1 2 3 4 5 →