Lattice location of 12B implanted in Si

被引：2
|
作者：
Izumikawa, T [1 ]
Matsuta, K
Sato, K
Miyake, T
Mihara, M
Fukuda, M
Zhu, SY
Minamisono, T
机构：
[1] Niigata Univ, Radioisotope Ctr, Niigata 9518510, Japan
[2] Osaka Univ, Dept Phys, Toyonaka, Osaka 5600043, Japan
[3] Osaka Univ, ISIR, Ibaraki, Osaka 5670047, Japan
[4] China Inst Atom Energy, Dept Nucl Phys, Beijing 102413, Peoples R China
[5] Fukui Univ Technol, Dept Applicat Nucl Technol, Fukui 9108505, Japan
来源：
PHYSICA B-CONDENSED MATTER | 2006年 / 376卷
关键词：
thermal atomic jump; dopant impurity; implantation; beta-NMR;
D O I：
10.1016/j.physb.2005.12.051
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The beta-NMR study of B-12 implanted in semiconductor Si was performed to understand dynamic behaviour of the defects. The temperature dependences of the fraction of the implantation sites were measured under two different external magnetic fields. The measurements were well explained by the fast spin-lattice relaxation due to the thermal atomic jump between the identical defect sites. The activation energy of the jump was also deduced as 0.40 +/- 0.04 eV under the external magnetic field of 3.5 kOe. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：193 / 195
页数：3
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