Photosensitivity of GaAs:N(GaP:N)/GaAs(GaP) heterojunctions in linearly polarized radiation

被引：0
|
作者：
Ivanov-Omskii, VI [1 ]
Rud', YV [1 ]
Rud', VY [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
TECHNICAL PHYSICS | 1999年 / 44卷 / 06期
关键词：
D O I：
10.1134/1.1259456
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Results are presented of investigations of the photoelectric properties of nitrided layer/GaAs (GaP) heterojunctions prepared by plasma treatment of GaAs and GaP crystals in the presence of nitrogen ions. The heterojunctions exhibited broad-band photosensitivity relative to the intensity of the natural radiation. It was established that when linearly polarized radiation is obliquely incident on the surface of nitrided layers, polarization photosensitivity occurs which is controlled by the angle of incidence Theta and increases proportionately as Theta(2). The spectral dependences of the induced photopleochroism are attributed to the antireflecting properties of the wide-gap layers. Nitrided-layer heterojunctions can be used as broad-band photoanalyzers for linearly polarized radiation. (C) 1999 American Institute of Physics. [S1063-7842(99)03006-8].
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页码：732 / 735
页数：4
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