Boron-doped nanocrystalline silicon germanium thin films for uncooled infrared bolometer applications

In this paper, boron-doped nanocrystalline Si0.78Ge0.22:H thin film is assessed for use as resistive sensing layer in uncooled infrared bolometer applications. The silicon germanium thin films were deposited by PECVD (plasma enhanced chemical vapor deposition) through decomposition of silane, germane and diborane diluted with argon at substrate temperature of 230 degrees C. Under optimum deposition parameters, the sensing films with modulate electrical resistivity (<10(4) Omega cm) and high temperature coefficient of resistance (TCR) (>-3%/K) were obtained at room temperature. 1/f noise character in the form of the normalized Hooge parameter was measured in the frequency range of 1-64 Hz, resulting in a lower 1/f noise compared to other materials currently used for device application. (C) 2013 Elsevier B.V. All rights reserved.