A parallel implementation of an electrothermal simulation for GaAs MESFET devices

被引：0

作者：

TsangPing, CS ^{[1
]}

Snowden, CM ^{[1
]}

Barry, DM ^{[1
]}

机构：

[1] FILTRON COMTEK UK LTD,SHIPLEY BD17 7SW,ENGLAND

来源：

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1996年 / 15卷 / 03期

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper describes the implementation of a Gallium Arsenide (GaAs) Metal-Semiconductor Field Effect Transistor (MESFET) device simulation on a relatively low cost transputer-based parallel system, The physical modeling consists of a comprehensive two-dimensional energy transport time-dependent model taking into account thermal heating effects within the device lattice suitable for steady-state and transient analysis, The semiconductor equations are solved by a Gauss-Seidel point iterative method with successive relaxation and discretised using a finite-difference scheme on a nonuniform grid, Algorithms targeted at message passing Multiple-Instructions Multiple Data (MIMD)) distributed memory architectures are described. The efficiency and stability of the parallel algorithms are briefly discussed, A performance model which characterizes the simulation in terms of its efficiency and speed-up for any problem size on any number of processors is presented, A parallel speed-up of 14 is feasible on an array of 16 transputers for a typical MESFET simulation.

引用

页码：308 / 316

页数：9

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