Electrical Characterization of the Graphene-SiC Heterojunction

被引：0

作者：

Anderson, T. J. ^{[1
]}

Hobart, K. D. ^{[1
]}

Nyakiti, L. O. ^{[2
]}

Wheeler, V. D. ^{[2
]}

Myers-Ward, R. L. ^{[1
]}

Caldwell, J. D. ^{[1
]}

Bezares, F. J. ^{[2
]}

Gaskill, D. K. ^{[1
]}

Eddy, C. R., Jr. ^{[1
]}

Kub, F. J. ^{[1
]}

Jernigan, G. G. ^{[1
]}

Tadjer, M. J. ^{[3
]}

Imhoff, E. A. ^{[1
]}

机构：

[1] USN, Res Lab, 4555 Overlook Ave SW, Washington, DC 20375 USA

[2] American Soc Engn Educ, Washington, DC USA

[3] Univ Politecn Madrid, E-28040 Madrid, Spain

来源：

SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2 | 2012年 / 717-720卷

关键词：

Graphene; p-SiC; n-SiC; heterojunction;

D O I：

10.4028/www.scientific.net/MSF.717-720.641

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Graphene, a 2D material, has motivated significant research in the study of its in-plane charge carrier transport in order to understand and exploit its unique physical and electrical properties. The vertical graphene-semiconductor system, however, also presents opportunities for unique devices, yet there have been few attempts to understand the properties of carrier transport through the graphene sheet into an underlying substrate. In this work, we investigate the epitaxial graphene/4H-SiC system, studying both p and n-type SiC substrates with varying doping levels in order to better understand this vertical heterojunction.

引用

页码：641 / +

页数：2

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