Preparation and characterization of oriented III-V nitride thin films by nebulized spray pyrolysis

被引：6
|
作者：
Raju, AR
Sardar, K
Rao, CNR [1 ]
机构：
[1] Indian Inst Sci, Solid State & Struct Chem Unit, Bangalore 560012, Karnataka, India
[2] Jawaharlal Nehru Ctr Adv Sci Res, Bangalore 560064, Karnataka, India
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2001年 / 4卷 / 06期
关键词：
D O I：
10.1016/S1369-8001(02)00015-X
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Thin films of GaN, InGaN, AlGaN and AlN on Si(I 0 0) as well as on Al2O3(0 0 0 1) single crystalline substrates have been deposited at 1123, 1023, 1173 and 1173K, respectively, by employing the simple inexpensive technique of nebulized spray pyrolysis. GaN films deposited on Si are polycrystalline where as the films deposited on Al2O3 are epitaxial. GaN epitaxial films show cathodoluminescence characteristics. Photoluminescence studies show that all the films are of high quality. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：549 / 553
页数：5
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